TEM
Self-Separation of Freestanding GaN from Sapphire Substrates with Stripe-Shaped GaN Seeds by HVPE
Preparation of 2-inch GaN Substrates
thermodynamic analysis
Is It Possible to Grow AIN by Hydride Vapor Phase Epitaxy?
threading dislocation
Formation and Annihilation of Threading Dislocations Associated with Stress in Hetero-Structure of GaN and AlGaN
Self-Separation of Freestanding GaN from Sapphire Substrates with Stripe-Shaped GaN Seeds by HVPE
transmission electron microscopy
Formation and Annihilation of Threading Dislocations Associated with Stress in Hetero-Structure of GaN and AlGaN
wide-bandgap
Fabrication of Native, Single-Crystal AlN Substrates
X-ray diffraction
Is It Possible to Grow AIN by Hydride Vapor Phase Epitaxy?
2S-ELOG
Growth, Separation and Properties of HVPE Grown GaN Films using Different Nucleation Schemes
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Last updated: 6 Aug 2004
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