Pendeo
Growth, Separation and Properties of HVPE Grown GaN Films using Different Nucleation Schemes
photoluminescence
Optical Characterization of Nitride Semiconductors
quatz reactor
Is It Possible to Grow AIN by Hydride Vapor Phase Epitaxy?
Raman scattering
Optical Characterization of Nitride Semiconductors
roughness
Preparation of Freestanding GaN and GaN Template by Hybride Vapor Phase Epitaxy
sapphire substrate
Is It Possible to Grow AIN by Hydride Vapor Phase Epitaxy?
Self-Separation of Freestanding GaN from Sapphire Substrates with Stripe-Shaped GaN Seeds by HVPE
seeded growth
Growth of AlN Crystals by Vaporization of Al and Sublimation of AlN Powder
self-separation method
Self-Separation of Freestanding GaN from Sapphire Substrates with Stripe-Shaped GaN Seeds by HVPE
semiconductor
Fabrication of Native, Single-Crystal AlN Substrates
solution growth
Growth of GaN Crystals and Epilayers from Solutions at Ambient Pressure
stress relief
Formation and Annihilation of Threading Dislocations Associated with Stress in Hetero-Structure of GaN and AlGaN
sublimation
Growth of AlN Crystals by Vaporization of Al and Sublimation of AlN Powder
surface morphology
Is It Possible to Grow AIN by Hydride Vapor Phase Epitaxy?
Copyright (C) 2001-2004 The Institute of Pure and Applied Physics. All rights reserved.
Last updated: 6 Aug 2004
P-S