i Preface

iii Overview

Approaches to Grow Nitrides by HVPE

p.1 Optical Characterization of Nitride Semiconductors

Jaime A. Freitas, Jr.

p.9 Is It Possible to Grow AlN by Hydride Vapor Phase Epitaxy?

Yoshinao Kumagai, Hiroshi Shikauchi, Jun Kikuchi, Takayoshi Yamane, Yoshihiro Kangawa and Akinori Koukitu

p.14 Growth, Separation and Properties of HVPE Grown GaN Films using Different Nucleation Schemes

T. Paskova, E. Valcheva, V. Darakchieva, P. P. Paskov, B. Arnaudov, B. Monemar, J. Birch, M. Heuken, R. F. Davis and P. Gibart

p.21 Formation and Annihilation of Threading Dislocations Associated with Stress in Hetero-Structure of GaN and AlGaN

N. Kuwano, T. Tsuruda, S. Terao, S. Kamiyama, H. Amano and I. Akasaki

Fabrication of GaN Wafers by HVPE

p.25 Preparation of Freestanding GaN and GaN Template by Hybride Vapor Phase Epitaxy

Hae-Yong Lee, Changho Lee and Kisoo Lee

p.28 Self-Separation of Freestanding GaN from Sapphire Substrates with Stripe-Shaped GaN Seeds by HVPE

Kazuyoshi Tomita, Tetsu Kachi, Seiji Nagai, Hisaki Kato and Naoki Shibata

p.32 Preparation of 2-inch GaN Substrates

Kensaku Motoki, Takuji Okahisa, Seiji Nakahata, Koji Uematsu, Hitoshi Kasai, Naoki Matsumoto, Yoshinao Kumagai, Akinori Koukitu and Hisashi Seki

Bulk Nitride Growth and Wafering

p.38 Fabrication of Native, Single-Crystal AlN Substrates

L. J. Schowalter, G. A. Slack, J. B. Whitlock, K. Morgan, S. B. Schujman, B. Raghothamachar, M. Dudley and K. R. Evans

p.41 Growth of AlN Crystals by Vaporization of Al and Sublimation of AlN Powder

Zlatko Sitar, Raoul Schlesser, Rafael Dalmau, Balaji Raghothamachar and Michael Dudley

p.46 Growth of GaN Crystals and Epilayers from Solutions at Ambient Pressure

E. Meissner, G. Sun, S. Hussy, B. Birkmann, J. Friedrich and G. Müller