IPAP Conference Series 1: IWN2000 Contents

xxv Preface

Plenary

p.1 Renaissance and Progress in Nitride Semiconductors

Isamu AKASAKI

Bulk & Homoepitaxy

p.7 HVPE/MOMBE Hybrid Growth of High Quality Hexagonal GaN on SiO2 Substrates with an AlN Buffer Layer

Tomoo NAKAYAMA, Makoto NAMERIKAWA, Osamu TAKAHASHI, Takashi SUEMASU, Fumio HASEGAWA

p.11 Polarity of GaN Grown on (001) A`-LiGaO2

Takashi MATSUOKA, Takao ISHII

p.15 Synthesis and Properties of HVPE Nitride Substrates

R. P. VAUDO, G. R. BRANDES, J. S. FLYNN, X. Xu M. F. CHRISS, C. S. CHRISTOS, D. M. KEOGH, F. D. TAMWEBER

p.19 HVPE Regrowth on Free-Standing GaN Quasi-Substrates

Tanya PASKOVA, Plamen P. PASKOV, Jens BIRCH, Evgenia VALCHEVA, Miroslav ABRASHEV, Sukkaneste TUNGASMITA, Bo MONEMAR

p.23 Epitaxial Lateral Overgrowth of GaN on Si Substrates by Hydride Vapor Phase Epitaxy

S. GU, Ling ZHANG, Rong ZHANG, G. W. WICKS, T. KUECH

p.27 Time-Modulated Growth of Thick GaN by Hydride Vapor Phase Epitaxy : Suppression of Dislocations

Wei ZHANG, Stephan ROESEL, Peter VEIT, Till RIEMANN, Helder R. ALVES, Dirk MEISTER, Wilhelm KRIEGSEIS, Detlev M. HOFMANN, Juergen CHRISTEN, Bruno K. MEYER

p.30 The Catalytic Growth of GaN Powders

Kee Suk NAHM, Sang Hyun AHN, Sang Hyun LEE

p.34 Structural and Optical Characterization of Thick GaN Films Grown by Direct Reaction of Ga and NH3

Kee Suk NAHM, Seung Hyun YANG, Sang Hyun AHN, Eun-Kyung SUH, Kee Young LIM

p.38 Thermodynamic Analysis and In Situ Gravimetric Monitoring of GaN Decomposition

Miho MAYUMI, Fumitaka SATOH, Yoshinao KUMAGAI, Kikurou TAKEMOTO, Akinori KOUKITU

p.42 Influence of Growth Temperature on the Crystalline Quality of Hexagonal GaN Layer on GaAs (111)A by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy

Yoshinao KUMAGAI, Hisashi MURAKAMI, Kikurou TAKEMOTO, Akinori KOUKITU, Hisashi SEKI

p.46 Effect of High Temperature GaN Buffer Layer on the Growth of Thick GaN by Hydride Vapor Phase Epitaxy

Wei ZHANG, Helder R. ALVES, JNurgen BLNASING, Detlev M. HOFMANN, Alois KROST, Bruno K. MEYER

p.49 Cathodoluminescence Characterization of Thick GaN Films Grown by HVPE

Hwa-Mok KIM, Jae-Eung OH, Tae-Won KANG

p.53 The Lateral Growth of GaN by Sublimation Method

Seogwoo LEE, Hyunjae LEE, Suk-Ki MIN, Jonghun LYON, Seong-Ju PARK

p.56 Dynamics and Polarization of Group-III Nitrides

U. GROSSNER, J. FURTHMNULLER, F. BECHSTEDT

p.60 Bowing of GaN Substrates by Hydride Vapor Phase Epitaxy

Sung. S. PARK, Il.-W. PARK, Sung. H. CHOH

Cubic Nitrides

p.64 MOCVD Growth of Cubic GaN: Materials and Devices

Hui YANG, Shuming ZHANG, Dapeng XU, Shunfeng LI, Degang ZHAO, Yi FU, Yuanping SUN, Zhihong FENG, Lianxi ZHENG

p.70 Influence of Si Doping on Optical Properties of Cubic GaN Grown on GaAs (001) Substrates by Metalorganic Vapor Phase Epitaxy

Fanghai ZHAO, Jun WU, Kentaro ONABE, Yasuhiro SHIRAKI

p.74 Cubic AlGaN/GaN and GaN/InGaN Heterostructures:Effects of p-type Doping

Sara Cristina Pinto RODRIGUES, Guilherme Matos SIPAHI, LuLisa Maria Ribeiro SCOLFARO, Jos Roberto LEITE

p.78 Strain Relaxation Mechanisms in Hexagonal and Cubic Nitride Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

B. DAUDIN, G. FEUILLET, H. MARIETTE, Guido MULA, N. PELEKANOS, A. BOURRET, J. L. ROUVIMERE, R. LANGER, C. ADELMANN, E. MARTINEZ-GUERRERO, J. SIMON

p.82 Vapor Phase Epitaxy of Cubic Gallium Nitride Using a Single Source

Sun Sook LEE, Sung Yong LEE, Chang Gyoun KIM, Yunsoo KIM

p.85 Effect of an Intermediate Layer on Cubic GaN Grown on GaAs (100): Substrate Protection and Strain Relaxation

Jun WU, Fanghai ZHAO, Kentaro ONABE, Yasuhiro SHIRAKI

p.89 Detection and Analysis of Hexagonal Phase Generation in Selective-Area Growth of Cubic GaN by Metalorganic Vapor Phase Epitaxy

S. SANORPIM, J. WU, K. ONABE, Y. SHIRAKI

p.93 Growth and Characterization of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC by RF-MBE

Toshio KITAMURA, Sung-Hwan CHO, Yuuki ISHIDA, Xu-Qiamg SHEN, Hisayuki NAKANISHI, Shigefusa CHICHIBU, Hajime OKUMURA

MOCVD

p.97 Regional Density Functional Theory for Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth

Koichi NAKAMURA, Akimoto TACHIBANA, Koh MATSUMOTO

p.101 Complex Flow and Gas Phase Chemical Reactions in GaN MOVPE Reactor

Kenji HARAFUJI, Yoshiaki HASEGAWA, Akihiko ISHIBASHI, Ayumu TSUJIMURA, Nobuyuki OTSUKA, Isao KIDOGUCHI, Yuzaburoh BAN

p.105 Large Lateral Growth Rate in GaN Grown Directly on Al2O3(0001) Substrate by Two-Flow Metalorganic Vapor Phase Epitaxy

Keizo MORIMOTO, Arata NATSUME, Naohisa INOUE

p.109 Optical Properties of GaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy Under Various Growth Conditions

Sho SHIRAKATA, Hideto MIYAKE, Kazumasa HIRAMATSU

p.113 Growth of AlGaN/GaN Heterostructure at Various NH3 Flows and Reactor Pressures and Their 2DEG Transport Properties

Bong KEE, Myung Seok OH, Euijoon YOON

p.117 MOVPE Growth of 4-inch GaN Epitaxial Wafers for FETs on a-face and c-face Sapphire Substrates

Michio KIHARA, Tadashi SASAKI, Tadayoshi TSUCHIYA, Harunori SAKAGUCHI

p.121 MOVPE Growth and Optical Properties of GaN/AlGaN Superlattices as Pseudo-Ternary Alloys

Casimirus SETIAGUNG, Atsushi NISHIKAWA, Mikio SHISHIDO, Jun WU, Kentaro ONABE, Yasuhiro SHIRAKI

p.125 Effect of Strain Relaxation and Screening on Intersubband Transitions in GaN/AlGaN Multiple Quantum Wells

Katsuyuki HOSHINO, Takao SOMEYA, Kazuhiko HIRAKAWA, Yasuhiko ARAKAWA

p.129 Effect of Intermediated Layers in Al0.65Ga0.35N/GaN Multiple Quantum Wells

Kei KANEKO, Norio IIZUKA, Nobuo. SUZUKI

p.133 A New Approach to Grow GaN by Low-Pressure MOCVD Using a Three Steps Tecnique

Baolin LIU, Dae Ho LIM, Mohamed LACHAB, Anwei JIA, Kiyoshi TAKAHASHI, Akihiko YOSHIKAWA

p.137 Polarization Control in Nitride-Based Semiconductor

Tetsuya TAKEUCHI, Steve LESTER, David BASILE, Grant GILORAMI, Rose TWIST, Francoise MERTZ, Margaret WONG, Richard SCHNEIDER, Hiroshi AMANO, Isamu AKASAKI

p.141 Effect of Carrier Gas on the Properties of MOVPE-Grown GaN and GaN/AlGaN MQWs: a Comparison of H2 to N2 as a Carrier Gas

Shigeo YAMAGUCHI, Michihiko KARIYA, Masayoshi KOSAKI, Yohei YUKAWA, Shugo NITTA, Hiroshi AMANO, Isamu AKASAKI

The Influence of the Low-Temperature Buffer-Layer on Substrate-Induced Biaxial Stress in a GaN Film on a Sapphire Substrate

p.144 Induced Biaxial Stress in a GaN Film on a Sapphire Substrate

Hong X. WANG, Shiro SAKAI

p.147 Improved 250nm UV PL Spectra from BAlGaN/AlN MQW on 6H-SiC Substrate by MOVPE using TEB

T. TAKANO, M. KURIMOTO, J. YAMAMOTO, Y. ISHIHARA, M. HORIE, H. KAWANISHI

p.150 Coaxial Impact Collision Ion Scattering Spectroscopy (CAICISS) Analysis for the Polarity Conversion of GaN Films Grown on Nitrided Sapphire Substrates

Dae Ho LIM, Ke XU, Yoshitake TANIYASU, Kousuke SUZUKI, Shigeyuki ARIMA, Baolin LIU, Kiyosi TAKAHASHI, Akihiko YOSHIKAWA

MBE

p.154 Reduction of Threading Dislocations in RF-MBE Grown Polarity Controlled GaN by AlN Multiple Interlayers

Akihiko KIKUCHI, Takayuki YAMADA, Kazuhide KUSAKABE, Daisuke SUGIHARA, Shinichi NAKAMURA, Katsumi KISHINO

p.158 Optimization of the Electron Mobilities in GaN Grown by Plasma-Assisted Molecular Beam Epitaxy

Ben HEYING, Christy POBLENZ, Chris ELSASS, Paul FINI, Steve DENBAARS, Jim SPECK, Yulia SMORCHKOVA, Umesh MISHRA

p.162 Optical and Electrical Properties of GaN Films with Ga-Polarity Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

X. Q. SHEN, T. IDE, S. H. CHO, M. SHIMIZU, S. HARA, H. OKUMURA, S. SONODA, S. SHIMIZU

p.166 Optical Emission from Surface and Buried AlGaN/GaN MQWs Grown by MBE on 6H-SiC

Roberta LANTIER, Angela RIZZI, Hans LNUTH, Oliver MAYROCK, Hans-JOi##gen WNUNSCHE, Fritz HENNEBERGER, Mauro LOMASCOLO, Roberto CINGOLANI

p.170 Molecular Beam Epitaxy of GaN (0001) Under Hydrogen

S. EINFELDT, C. KRUSE, S. FIGGE, D. HOMMEL

p.174 Resolved Band-Edge Luminescence of AlN on Different Substrates

Nikolai TEOFILOV, Klaus THONKE, Rolf SAUER, Dirk G. EBLING, Lutz KIRSTE, Klaus Wilhelm BENZ

p.178 An Indium Surfactant Effect in Cubic GaN RF-MBE Growth

Yukihiro NISHIO, Hiroki MORI, Atsushi MASUDA, Akio YAMAMOTO, Akihiro HASHIMOTO

p.182 Annealing Effect of Low Temperature Growth of InN Films by RF-MBE

Y. SAITO, N. TERAGUCHI, A. SUZUKI, T. ARAKI, Y. NANISHI

p.186 MBE growth of InN on Si toward Hole-Barrier Structure in Si Devices

Masahiro YOSHIMOTO, Takao NAKANO, Takashi YAMASHITA, Koji SUZUKI, Junji SARAIE

p.190 Crystal Growth of AlN on Al/Sapphire Interdegital Transducer at the Resonance Point of Nitrogen-Electron Cyclotron Plasma

Kenji MURANO, Takashi INUSHIMA, Yukinori HASEBE, Yasutaka WAKASUGI, Hideaki KONDO, Yosiharu KOIZUMI, Tadashi SHIRAISHI, Valery Yu. DAVYDOV, Seisirou OHOYA

p.194 Structural Analysis of AlN films grown on SiC substrate by RF-MBE and RF-MEE

Tsutomu ARAKI, Nobuaki TERAGUCHI, Akira SUZUKI, Yasushi NANISHI

p.198 Fabrication of Conductive AlN Films by Pulsed Laser Deposition

Mitsuo OKAMOTO, Yoke K. YAP, Masashi YOSHIMURA, Yusuke MORI, Takatomo SASAKI

p.202 Influence of the Ion Irradiation During Low-Energy Nitrogen Ion Assisted Deposition of Wurtzitic Gallium Nitride Films on Sapphire

JNurgen W. GERLACH, Ruth SCHWERTBERGER, David SCHRUPP, Stefan SIENZ, Wilfried ATTENBERGER, Bernd RAUSCHENBACH

p.206 Gas-Source MBE Growth of GaN Films Using Tertiarybutylhydrazine as a Nitrogen Precursor

Masanori YAMADA, Ryuji SUEMOTO, Hideaki YAMASHITA, Kangsa PAK, Yukichi TAKAMATSU

p.210 The Effects of Atomic Hydrogen on the III-Nitride Growth Dynamics in RF-Molecular Beam Epitaxy

Yoshihiro OKAMOTO, Kazuya TAKAHASHI, Yoshitake OKADA, Mitsuo KAWABE

p.213 Growth and Characterization of GaN Epilayer on Sapphire Substrate by Ammonia Gas Source Molecular Beam Epitaxy

Satoshi KURAI, Shuichi KUBO, Tomokazu OKAZAKI, Tsunemasa TAGUCHI, Matt ROSAMOND, Jim Van HOVE, Peter CHOW

p.217 InGaN Film Growth on Polarity Controlled GaN Buffer Layer by Ammonia-MBE

Saki SONODA, Saburo SHIMIZU

p.220 Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)

A. PARKHOMOVSKY, B. BENJAMINSSON, B. E. ISHAUG, A. M. DABIRAN, P. I. COHEN

p.224 Comparison of Dislocation Properties in GaN Epilayer Grown by MOCVD with MBE

Takahiro MARUYAMA, Masako IKEYA, Shin-ichi MORISHIMA, Katsuhiro AKIMOTO

p.228 Advances in III-Nitride Growth by Ammonia-MBE

J. B. WEBB, H. TANG, J. A. BARDWELL

Novel Growth Technique

p.233 Flow Modulation Epitaxy of InN/GaN Heterostructures; Towards InN Based HEMTs

Stacia KELLER, Ilan BEN-YAACOV, Steven P. DENBAARS, Umesh K. MISHRA

p.237 Pulsed MOCVD Technique for Lateral Overgrowth of GaN on SiC with Conducting Buffer Layers

Qhalid FAREED, Jinwei YANG, Jianping ZHANG, Vinod ADIVARAHAN, M. Asif KHAN

p.241 Influence of Growth Interruptions and Gas Ambient on Optical and Structural Properties of InGaN/GaN Multilayer Structures

Alexei V. SAKHAROV, Wsevolod V. LUNDIN, Igor L. KRESTNIKOV, Denis A. BEDAREV, Andrew F. TSATSUL'NIKOV, Alexander S. USIKOV, Zhores I. ALFEROV, Nikolai N. LEDENTSOV, Axel HOFFMANN, Dieter BIMBERG

p.244 Epitaxial Growth of AlN on Sapphire by ECR Plasma Assisted MOCVD under Mirror Field Conditions

Knaji YASUI, Suguru HOSHINO, Tomohiko MAEDA, Tadashi AKAHANE

p.247 Observation of the Early Stages and 3D-2D Transition of MOCVD Grown GaN with LT-GaN Buffer Layer

Seong-Woo KIM, Takashi YAMADA, Kazuhiro HAGA, Masahiro AKATSU, Toshimasa SUZUKI

p.251 GaN Thin Films Grown on Hydrogen Plasma Cleaned Sapphire Substrates by Plasma Assisted MOCVD

SUGIANTO , R. A. SANI, M. BUDIMAN, P. ARIFIN, M. BARMAWI

p.255 AlGaN Films and AlGaN/GaN Superlattices Prepared by Hot Wall Epitaxy

A. ISHIDA, M. KITANO, T. OSE, H. FUJITA, A. HATA, K. ISHINO, Y. INOUE, H. FUJIYASU

p.259 GaN Epitaxial Growth Using RF Pulsed Laser Deposition (PLD) Method with Molten Ga Target

Jun SUZUKI, Akihiro NAKAMURA, Kouhei MIZUNO, Takeshi HOSOMI, Tetsuro MAKI, Takeshi KOBAYASHI

p.263 GaN Thin Film Grown by Reactive Close-Spaced Method at 750ì·C

Yasuyuki WATANABE, Masatoshi SANO

Epitaxial Lateral Growth

p.267 Pendeo-Epitaxial Growth and Characterization of Gallium Nitride and Related Materials

Robert F. DAVIS, Thomas GEHRKE, Kevin J. LINTHICUM, Tsvetanka S. ZHELEVA, Pradeep RAJAGOPAL, Edward PREBLE, Chris A. ZORMAN, Mehran MEHREGANY

p.272 Crystallographic Structure of FIELO-GaN Films Studied by Scanning Reflection Electron Microscopy

Heiji WATANABE, Naotaka KURODA, Haruo SUNAKAWA, Akira USUI

p.276 Measurement and Minimization of Wing Tilt in Laterally Overgrown GaN on a SiO2 Mask

Paul FINI, Lijie ZHAO, James S. SPECK, Steven P. DENBAARS, A. MUNKHOLM, Carol THOMPSON, G. B. STEPHENSON, J. A. EASTMAN, M. V. RAMANA MURTY, O. AUCIELLO

p.280 Cathodoluminescence Microscopy and Micro-Raman Spectroscopy of Growth Domains Formed During Epitaxial Lateral Overgrowth of GaN

Till RIEMANN, Juergen CHRISTEN, Axel KASCHNER, Axel HOFFMANN, Christian THOMSEN, Olivier PARILLAUD, Volker WAGNER, Marc ILEGEMS

p.284 Crystallographic Tilt in Lateral Overgrowth of GaN Epitaxial Layers-Mask Material Dependence-

S. TOMIYA, T. HINO, S. KIJIMA, T, ASANO, H. NAKAJIMA, K. FUNATO, T. ASATSUMA, T. MIYAJIMA, K. KOBAYASHI, M. IKEDA

p.288 Epitaxial Lateral Overgrowth of GaN using Tungsten Nitride (WNx) Mask via MOVPE and Electrical Properties of WNx/GaN Contacts

Kazumasa HIRAMATSU, Shingo NAMBU, Yasutoshi KAWAGUCHI, Nobuhiko SAWAKI, Hideto MIYAKE, Yasushi IYECHIKA, Takayoshi MAEDA

p.292 Heteroepitaxy and Characterization of GaN with Low Dislocation Density on Periodically Grooved Sapphire Substrate

Masahiro YANO, Theeradetch DETCHPROHM, Ryo NAKAMURA, Shigekazu SANO, Shingo MOCHIZUKI, Tetsuya NAKAMURA, Hiroshi AMANO, Isamu AKASAKI

p.296 Control of Self-Limited (0001) Facet in Selectively Grown GaN Hexagonal Structures with Dot Patterned Mask

C. S. KIM, K. S. KIM, Y. K. HONG, C.-H. HONG, K. Y. LIM, G. M. YANG, H. J. LEE

p.300 Transmission Electron Microscopy Study of Selective Area Growth of GaN on (111)Si using AlGaN as an Intermediate Layer

Shigeyasu TANAKA, Yasutoshi KAWAGUCHI, Kazuhiro YAMADA, Nobuhiko SAWAKI, Michio HIBINO, Kazumasa HIRAMATSU

p.304 Selective Growth of GaN Microstructures on (111)Facets of a (001)Si Substrate by MOVPE

Yoshio HONDA, Yasutoshi KAWAGUCHI, Tomonobu KATO, Masahito YAMAGUCHI, Nobuhiko SAWAKI

p.308 Photoluminescence Spectra and Impurity Incorporation in an SAG-ELO GaN by MOVPE

Yoichiro YAMAMOTO, Josuke BABA, Tomonobu KATO, Yasutoshi KAWAGUCHI, Masahito YAMAGUCHI, Nobuhiko SAWAKI

p.312 Growth and Characterization of High Quality GaN Film by Expitaxial Lateral Overgrowth

Mao Sheng HAO, Wen WANG, Peng LI, Wei LIU, Lian Shan WANG, Soo Jin CHUA

p.316 Morphological Evolution During Growth of InGaN Laser Diodes on Laterally Overgrown GaN on Sapphire

Monica HANSEN, Paul T. FINI, B. HEYING, James S. SPECK, Steven P. DENBAARS

p.320 High-Quality Laterally Overgrown GaN Layers without Crystallographic Tilting and Voids

Cheolsoo SONE, Ig-Hyeon KIM, Ok Hyun NAM, Yongjo PARK

p.324 Reduction of Dislocation Density in GaN by Facet Controlled ELO

Hideto MIYAKE, Hiromitsu MIZUTANI, Katsuya NISHIYAMA, Atsushi MOTOGAITO, Kazumasa HIRAMATSU, Yasushi IYECHIKA, Takayoshi MAEDA

p.328 Dynamical Process of Mass Transport in GaN

Shugo NITTA, Yohei YUKAWA, Masayoshi KOSAKI, Motoaki IWAYA, Shigeo YAMAGUCHI, Hiroshi AMANO, Isamu AKASAKI

Substrate Surface Preparation & GaAs, Si Substrate

p.331 A Cause of the Crystalline Orientation in Hexagonal GaN Grown on AlAs/GaAs (001)

Atsushi HAMAGUCHI, Mitsuru FUNATO, Teruki ISHIDO, Shizuo FUJITA, Shigeo FUJITA

p.335 Growth Evolution of GaN on GaP (001) Substrate by Metalorganic Vapor Phase Epitaxy

Dong-Sing WUU, Wei-Tsung LIN, Chang-Chi PAN, Ray-Hua HORNG, Chung-Yuan KUNG

p.339 Growth Rate and Its Limiting Process for Metalorganic Vapor Phase Epitaxial InN

Masato ADACHI, Yasuyuki MURAKAMI, Akihiro HASHIMOTO, Akio YAMAMOTO

p.343 Significance of the Suppression of Substrate Surface Nitridation for Epitaxial Growth of Wurtzite InN on GaP(111) and InP(111) Substrates

Ashraful G. BHUIYAN, Akio YAMAMOTO, Akihiro HASHIMOTO, Ryuya ISHIGAMI

p.347 Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN

Masato ADACHI, Akihisa SEKI, Akihiro HASHIMOTO, Akio YAMAMOTO

p.351 Influences of Inert Nitrogen Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions on Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(111) Substrates by Moleclular-Beam Epitaxy Assisted by Electron Cyclotron Resonance

Tokuo YODO, Hironori ANDO, Hironori TSUCHIYA, Daiki NOSEI, Masakazu SHIMENO, Yoshiyuki HARADA, Mitsuyasu FURUSAWA, Mamoru YOSHIMOTO

p.355 Heteroepitaxial Growth of GaN on Si Substrate Coated with a Thin Flat SiC Buffer layer

Deliang WANG, Seikoh YOSHIDA, Yuichi HIROYAMA, Masakazu ICHIKAWA

p.359 Epitaxial Growth of AlN on Si(111) by Laser MBE

Jitsuo OHTA, Hiroshi FUJIOKA, Masamoto SUMIYA, Mitsuyasu FURUSAWA, Mamoru YOSHIMOTO, Hideomi KOINUMA, Masaharu OSHIMA

p.363 The Effects of the Growth Rate along with AlN Nucleation Layer on the Qualities of GaN Epilayers Grown on Si(111) Substrate Using 3C-SiC Intermediate Layer

Jong Ho KANG, Chan Il PARK, Young Ho SONG, Sung Lan CHON, Gue Mo YANG, Kee Young LIM, Kee Suk NAHM

p.367 Epitaxial Growth of Galium Nitride on (111)GaAs Substrates

Qixin GUO, Akira OKADA, Mitsuhiro NISHIO, Hiroshi OGAWA

p.371 Electrical and Optical Properties of GaN Grown by Radical Beam Epitaxy on the (110) GaAs Surface

Tamaz BUTKHUZI, Giorgi NATSVLISHVILI, Galaktion NATSVLISHVILI, Tamar KHULORDAVA, Khatuna GELOVANI, Dimitri PEIKRISHVILI

InGaN

p.375 Structural Properties, In Distribution, and Photoluminescence of Multiple InGaN/GaN Quantum Well Structures

B. NEUBAUER, H. WIDMANN, D. GERTHSEN, T. STEPHAN, H. KALT, J. BLNASING, P. VEIT, A. KROST, O. SCHNON, M. HEUKEN

p.379 Characteristics of Optical Properties of the Interrupt Growth Method on InGaN/GaN MQW Structures

C. F. LIN, C. K. SHU, W. H. LEE, Tzu-Chi WEN, C. F. CHU, J. Y. FANG, W. K. CHEN, Wei-I LEE, S. C. WANG

p.382 Comparison of the Optical Properties in InGaN/GaN Quantum Well Structures Grown on (0001) and (11-20) Sapphire Substrates

Tao WANG, Jie BAI, Shiro SAKAI

p.386 Evidence of Localized States in InGaN/GaN Double Heterostructures

Mee-Yi RYU, Phil-Won YU, Jin Soo KIM, Eun-Joo SHIN, Joo In LEE, Sung Kyu YU, Eun-Soon OH, Yong Jo PARK, Hyeong Soo PARK, Tae Ill KIM

p.390 Indium Aggregation and Phase Seperation in InGaN/GaN Quantum Wells Studied with High Resolution Transmission Electron Microscopy

Yen-Sheng LIN, C. HSU, Kung-Jeng MA, Shih-Wei FENG, Chi-Chih LIAO, C. C. YANG, Chang-Cheng CHOU, Chia-Ming LEE, Jen-Inn CHYI

p.393 The Effects of Thermal Annealing Treatments on InGaN/GaN Quantum Well Structures

Ki Soo KIM, Gye Mo YANG, Won-Hee LEE, Young Ho SONG, Jeon Wook YANG, Chang-Hee HONG, Kee Young LIM, Hyung Jae LEE, Hyung Koun CHO, Jung Yong LEE

Quantum Dots

p.397 GaN and InGaN Quantum Dots Grown by MBE: from UV to Red Light Emission

Nicolas GRANDJEAN, Benjamin DAMILANO, Jean MASSIES

p.403 Growth and Physics of Nitride-Based Quantum Dots for Optelectronics Applications

Yasuhiko ARAKAWA, Takao SOMEYA, Koichi TACHIBANA

p.409 Optical Properties of Self-Organized GaN Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

G. POZINA, V. V. MAMUTIN, V. A. VEKSHIN, S. V. IVANOV, J. P. BERBMAN, B. MONEMAR

p.413 Growth of Self-Organized GaN Nanostructures on Al2O3 (0001) by RF MBE

Vladimir V. MAMUTIN, Vladimir V. VEKSHIN, Valentin V. JMERIK, Valentin A. RATNIKOV, Valery Yu. DAVYDOV, Nikolay A. CHERKASHIN, Sergey V. IVANOV, Galia POZINA, Peder BERGMAN, Bo MONEMAR

p.417 High-Density InGaN Quantum Dots Fabricated by Selective MOCVD Growth

Koichi TACHIBANA, Takao SOMEYA, Satomi ISHIDA, Yasuhiko ARAKAWA

p.421 Theory of Strain, Built-in Electric Fields and Carrier States in Self-Organised GaN/AlN Quantum Dots

A. D. ANDREEV, E. P. OfREILLY

III-V-N

p.425 Role of In on the Formation of Wire Structures on GaNAs Surfaces Grown by MOMBE

Ikuo SUEMUNE, Nobuki MOROOKA, Katsuhiro UESUGI, Young-Woo OK, Tae-Yeon SEONG, Hideaki MACHIDA, Norio SHIMOYAMA

p.429 Nitride-Rich GaN1-xPx Growth by Photo-Assisted Metalorganic Chemical Vapor Deposition and Its Properties for a Light-Emitting Diode

Junjiroh KIKAWA, Seikoh YOSHIDA, Yoshiteru ITOH

p.433 CBE Growth and Characterization of InGaAsN/InP Quantum Well Structures using NH3

M. BUDA, M. R. LEYS, A. SILOV, H. VONK, J. H. WOLTER, C. T. FOXTON

p.437 Mechanism for Photoluminescence in InAsN/InGaAs Single Quantum Well

Yang-Fang CHEN, Wei-Kong HUNG, Jung-Chuan FAN, Ji-Shan WANG, How-Hian LIN

p.441 Electronic Structures of GaNP and InNAs Ordered alloys Calculated by the Pseudopotential Method

Sadanojo NAKAJIMA, Daisuke IKEDA, Shiro SAKAI

p.444 Envelope Function Calculations in GaAsN-GaN Quantum wells

Bernard GIL, Pierre BIGENWALD

Dopants & Defects Including Crakcs and Dislocations

p.447 Beryllium-Implanted Gallium Nitride: Electrical and Structural Analysis

Leng Seow TAN, Yuejjun SUN, Soo Jin CHUA, Zhe Chuan FENG

p.451 Magnesium and Beryllium Doping During RF-Plasma MBE Growth of GaN

T. H. MYERS, A. J. PTAK, Lijun WANG, N. C. GILES

p.455 Geometrical Magneto Resistance Measurement of Vertical Conductivity in GaN and Comparison With Lateral Transport

Valery GARBER, Gad BAHIR, Oded KATZ, Cesile UZAN-SAGUY, Emanuel BASKIN, Joseph SALZMAN

p.459 Detection and Identification of Deep Levels in n-GaN

Adrian HIERRO, J. J. BOEKL, Steven A. RINGEL, Monica HANSEN, Umesh K. MISHRA, Steven P. DENBAARS, James S. SPECK, D. C. LOOK

p.463 Long-Term Photocapacitance Decay Behavior in Undoped GaN

H. M. CHUNG, Y. C. PAN, W. C. CHUNG, N. C. CHEN, C. C. TSAI, C. I. CHIANG, C. H. LIN, H. CHANG, M. C. LEE, W. H. CHEN, W. K. CHEN

p.467 Correlation Between Deep Defects and Persistent Photoconductivity in Undoped GaN and AlGaN Layers

Hartmut WITTE, Marco LISKER, Andre KRTSCHIL, Eike SCHRENK, JNurgen CHRISTEN, Alois KROST, Ferdinand SCHOLZ, Bertram KUHN

p.471 TEM Study on Pit-Formation on the End of Threading Dislocations in MOVPE-GaInN/GaN

Koji KAGAWA, Kayo HORIBUCHI, Noriyuki KUWANO, Kensuke OKI, Kazumasa HIRAMATSU

p.475 Spatially Resolved Spectroscopy at Micro-Cracks in AlGaN Layers

D. RUDLOFF, T. RIEMANN, J. CHRISTEN, K. VOGELER, S. EINFELDT, D. HOMMEL, A. KASCHNER, A. HOFFMANN, C. THOMSEN

p.479 Cracking of GaN on Sapphire from Induced Non-Uniformity in Residual Stress

Yves LACROIX, Sung Hoon CHUNG, Shiro SAKAI

p.482 Resonant Photoemission Study of Eu Doped GaN

Takahiro MARUYAMA, Shin-ichi MORISHIMA, Hidetaka KAGATSUME, Yasushi NANISHI, Katsuhiro AKIMOTO

p.486 Photoluminescence Properties of Eu-Doped GaN by Ion Implantation

Yasuo NAKANISHI, Akihiro WAKAHARA, Akira YOSHIDA, Takeshi OHSIMA, Hisayoshi ITOH, Shiro SAKAI

p.490 Concentration Quenching of Eu Related Luminescence from Eu-doped GaN Studied by EXAFS Analysis

Shinichi MORISHIMA, Hyungjin BANG, Yoshinori HAGIO, Takahiro MURAYAMA, Katsuhiro AKIMOTO, Moasaharu MOMURA

p.494 Growth and Characterization of Tb Doped GaN

Hyungjin BANG, Shinichi MORISHIMA, Takahiro MARUYAMA, Katsuhiro AKIMOTO, Masaharu NOMURA, Eiichi YAGI

p.498 Luminescence Properties of Er implanted n-GaN

Shinichiro UEKUSA, Tomoaki HIRANO

p.502 Direct Observation of Defect Structures in Ga-Polar and N-Polar GaN Epilayers by Cross-Sectional Cathodoliminescence

Xiaolong DU, Daeho LIM, Ke XU, Yoshitaka TANIYASU, Baolin LIU, Guanghui YU, Anwei JIA, Kiyoshi TAKAHASHI, Akihiko YOSHIKAWA

p.506 Blue Photoluminescence Activated by Surface States in GaN

Michael A. RESHCHIKOV, Paolo VISCONTI, Hadis MORKOC, Richard J. MOLNAR, Cole W. LITTON

Optical Characterization

p.510 Excitation Spectroscopy and Level Assignment in PiezoelectricˆBGa1-xInxN/GaN Quantum Wells

Christian WETZEL, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI

p.516 Free Carrier Screening of Quantum-Confined Stark Effect Affecting on Luminescence Energy Shift and Carrier Lifetime in InGaN Quantum Wells

Takamasa KURODA, Atsushi TACKEUCHI

p.520 Influence of Internal Electric Fields on the Carrier Dynamics in GaN/(Al,Ga)N Multiple Quantum Wells with Different Orientation and Strain State

Holger T. GRAHN, Andreas THAMM, Patrick WALTEREIT, Oliver BRANDT, Klaus H. PLOOG

p.524 The Investigation on the Emission Mechanism of InGaN/GaN Quantum Well Structure

Tao WANG, Jie BAI, Shiro SAKAI

p.528 Spectroscopic Studies in InGaN Single-Quantum-Well Amber Light-Emitting Diodes

Shigefusa F. CHICHIBU, Takashi AZUHATA, Takayuki SOTA, Takashi MUKAI, Shuji NAKAMURA

p.532 Temperature Dependent Carrier Dynamics in GaInN/GaN Multiple Quantum Wells with Varying In Composition

Satoshi WATANABE, Milan Singh MINSKY, Norihide YAMADA, Tetsuya TAKEUCHI, Richard SCHNEIDER, Chiharu SASAKI, Masaki IWATA, Yoichi YAMADA, Tsunemasa TAGUCHI

p.536 Non-Radiative Nature of Threading Dislocations in GaN Grown by Metal-Organic Chemical Vapor Deposition

Takao MIYAJIMA, Tomonori HINO, Shigetaka TOMIYA, Akihiro SATAKE, Eiji TOKUNAGA, Yasuaki MASUMOTO, Takahiro MARUYAMA, Masako IKEYA, Shin-ichi MORISHIMA, Katsuhiro AKIMOTO, Katsunori YANASHIMA, Shigeki HASHIMOTO, Toshimasa KOBAYASHI, Masao IKEDA

p.540 Nonradiative Recombination Processes in GaN-Based Semiconductors Probed by the Transient Grating Method

Koichi OKAMOTO, Yoichi KAWAKAMI, Shigeo FUJITA, Masahide TERAZIMA, Shuji NAKAMURA

p.544 Distribution of Below-Gap States in GaN-based Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence

Jose Maria Zanardi OCAMPO, Norihiko KAMATA, Manabu HIRASAWA, Katsuyuki HOSHINO, Koji YAMADA, Takao SOMEYA, Yasuhiko ARAKAWA

p.548 Photoreflectance Spectra of Excitonic Polaritons in Wurtzite GaN

Kosuke TORII, Shigefusa F. CHICHIBU, Takahiro DEGUCHI, Hisayuki NAKANISHI, Takayuki SOTA, Shuji NAKAMURA

p.552 Motional Narrowing and Rayleigh Scattering of Exciton-Polaritons in GaN/AlGaN Multiple Quantum Wells

Guillaume MALPUECH, Alexey KAVOKIN

p.556 Gas Source Molecular Beam Epitaxy Growth of Polycrystalline GaN on Metal Substrate and the Observation of Strong Photoluminescence Emision

Koichiro YAMADA, Hajime ASAHI, Hitoshi TAMPO, Yoshihiro IMANISHI, Kuniyuki OHNISHI, Kumiko ASAMI

p.560 Structural and Optical Characteristics of GaInN Multiple Quantum Wells Grown by Raised-Pressure Metalorganic Chemical Vapor Deposition

Kenji FUNATO, Shigetaka TOMIYA, Shigeki HASHIMOTO, Takao MIYAJIMA, Toshimasa KOBAYASHI

p.564 Optical Properties of AlInGaN Alloys and AlInGaN/InGaN Multiple Quantum Wells

Jianping ZHANG, Jinwei YANG, Grigory SIMIN, Maxim SHATALOV, M. Asif KHAN, Remis GASKA, Michael S. SHUR, Gintautas TAMULAITIS, Karolis KAZLAUSKAS, Saulius JURSENAS, Arturas ZUKAUSKAS

p.567 Optical Properties of (Al)GaN-Based Structures for Near- and Deep-Ultraviolet Emitters

Sergiy BIDNYK, Jack Biu LAM, Brian D. LITTLE, Gordon H. GAINER, Yong-Hwan KWON, Jin-Joo SONG, Gary E. BULMAN, Hua-Shuang KONG

p.570 Excitons in GaN/GaAlN Quantum Wells: Optical Pumping and Temperature Effect

A. KAVOKIN, P. BIGENWALD, B. GIL, P. LEFEBVRE

p.575 Correlation between Optical Emission and Disordering of Indium in InxGa1-xN Single Quantum Wells Analyzed by Coaxial Impact Collision Ion Scattering Spectroscopy

Masatomo SUMIYA, Shigefusa F. CHICHIBU, Keisuke MIZUNO, Mituyasu FURUSAWA, Mamoru YOSHIMOTO, Shuji NAKAMURA

p.579 Magneto-Spectroscopy of Donor-Bound Excitons in Homoepitaxial GaN

A. WYSMOLEK, V. F. SAPEGA, T. RUF, M. CARDONA, M. POTEMSKI, P. WYDER, R. STEPNIEWSKI, K. PAKULA, J. M. BARANOWSKI, I. GRZEGORY, S. POROWSKI

p.583 Ground and Excited Excitonic Resonances in Heteroepitaxial GaN Layers: A Magnetooptical Study

A. WYSMOLEK, M. POTEMSKI, R. STEPNIEWSKI, K. PAKULA, J. M. BARANOWSKI, G. MARTINEZ, P. WYDER

p.587 High-Resolution Polariton Spectra of Homoepitaxial GaN: Temperature Dependence

Klaus THONKE, Klaus KORNITZER, Martin GREHL, Rolf SAUER, Christoph KIRCHNER, Veit SCHWEGLER, Markus KAMP, Michal LESZCZYNSKI, Izabella GRZEGORY, Sylwester POROWSKI

p.591 Near-Band-Edge Recombination in GaN, GaN:Mg and GaN:SiˆBbetween 12 and 650K

A. L. GURSKII, M. GERMAIN, S. V. VOITIKOV, E. V. LUTSENKO, I. P. MARKO, V. N. PAVLOVSKII, B. SCHINELLER, O. SCHNON, M. HEUKEN, E. KARTHEUSER, K. HEIME, G. P. YABLONSKII

p.595 Polarized Photoluminescence Spectroscopy of HVPE GaN with Different Dislocation Structures

T. V. SHUBINA, A. A. TOROPOV, V. V. RATNIKOV, R. N. KYUTT, S. V. IVANOV, T. PASKOVA, E. VALCHEVA, B. MONEMAR

p.599 Recombination Dynamics in GaN and InGaN/GaN Multiple Quantum Wells on Air-Bridged Lateral Epitaxial Grown GaN Layers

Tomoaki IZUMI, Kenichi INOUE, Yukio NARUKAWA, Koichi OKAMOTO, Yoichi KAWAKAMI, Shigeo FUJITA, Ayumu TSUJIMURA, Isao KIDOGUCHI, Yuzaburo BAN

p.603 Photoluminescence from High-Quality InGaN Multiple Quantum Wells Grown by Metal Organic Chemical Vapor Deposition

Wei LIU, Wan WANG, Peng LI, Soo Jin CHUA, Zhe Chua FENG

p.606 Photoluminescence Excitation Spectrum of Undoped and Zn Doped InGaN Microcrystals

Hisashi KANIE, Takahiro KAWANO, Kose SUGIMOTO, Ryoji KAWAI

p.610 Effects in Carrier Dynamics of Isoelectronic In Doped in GaN Films Grown by Metaloganic Vapor Phase Epitaxy

H. Y. HUANG, C. K. SHU, W. C. LIN, K. C. LIAO, C. H. CHUANG, M. C. LEE, W. K. CHEN, W. H. CHEN, Y. Y. LEE

p.614 Mesoscopic Capacitor Effect in GaN/AlGaN Quantum Wells

Mauro LOMASCOLO, Giampiero TRAETTA, Adriana PASSASEO, Anna POMARICO, Roberto CINGOLANI, Aldo Di CARLO, Paolo LUGLI, Annalisa BONFIGLIO, Marina BERTI, Enrico NAPOLITANI, S. K. SINHA, Antonio Vincenzo DRIGO

p.618 Optical Characterization for Indium Segregation Studies inˆBInGaN/GaN Quantum Wells

S. W. FENG, C. C. LIAO, C. C. YANG, Y. S. LIN, K. J. MA, C. C. CHUO, C. M. LEE, J. I. CHYI

p.621 Time-Resolved Photoluminescence of InGaN/GaN MQW Structures

Alexander V. ANDRIANOV, Valery Yu. NEKRASOV, Natalia M. SCHMIDT, Eugene E. ZAVARIN, Nick N. ZINOV'EV

p.625 Electrical Chracterization of Ion Implantation Induced Defect States in Gallium Nitride

Andre KRTSCHIL, Andy KIELBURG, Hartmut WITTE, Alois KROST, JNurgen CHRISTEN, Axel WENZEL, Bernd RAUSCHENBACH

p.629 The Electronic Structure and Optical Properties of Phosphorus Implanted GaN Films

Chen-Ke SHU, Wen-Hsiung LEE, Huai-Ying HUANG, Chih-Hung CHUANG, Wei-Kuo CHEN, Wen-Hsiung CHEN, Ming-Chih LEE

p.633 Electrical and Optical Properties of Si- and Mg-Doped Polycrystalline GaN on Quartz Glass Substrate

Hitoshi TAMPO, Hajime ASAHI, Masanobu HIROKI, Yoshihiro IMANISHI, Kumiko ASAMI, Shun-ichi GONDA

p.637 Indium Silicon Co-Doping in AlGaN/GaN Multiple Quantum Wells

Shiro SAKAI, Hiayuki SAEKI, Yuji IZUMI, Tao WANG

p.640 Effect of Impurity Doping on the Mechanical Properties ofˆBAlxGa1-xN Ternary Alloys

Shinji TERAO, Motoaki IWAYA, Ryo NAKAMURA, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI

p.644 GaN-Based Electroluminescence Device with AC Operation Using GaN Powder

Tohru HONDA, Kyousuke MAKI, Hideo KAWANISHI

p.647 Reflection Spectra of Al1-xGaxN

Kazutoshi FUKUI, Hiroshi MIURA, Akira OKADA, Qixin GUO, Satoru TANAKA, Hideki HIRAYAMA, Yoshinobu AOYAGI

p.651 Temperature Dependence of Aluminum Nitride Reflectance Spectra

Qixin GUO, Akira OKADA, Mitsuhiro NISHIO, Hiroshi OGAWA, Kazutoshi FUKUI, Akira YOSHIDA

p.655 Observation of Second Harmonic Emission and Three-Photon Fluorescence from Gallium-Nitride

Chao-Kuei LEE, Fu-Jen KAO, S. C. WANG andˆBCi-Ling PAN

Raman Scattering

p.657 Raman Scattering in Hexagonal AlxGa1-xN Alloys and Optical Modes Behavior

Valery DAVYDOV, Albert KLOCHIKHIN, Igor GONCHARUK, Alexander SMIRNOV, Andrei NIKOLAEV, Alexander USIKOV, Wsevolod LUNDIN, Marina BAIDAKOVA, Jochan ADERHOLD, Jens STEMMER, Olga SEMCHINOVA

p.661 Overdamped Electron Plasma Oscillations in Cubic AlxGa1-xN Layers Observed by Raman Scattering Spectroscopy

JosRafael Leon FERNANDEZ, AmLerico Sheitiro TABATA, Valmir Antio CHITTA, Donat Josef AS, Tomas FREY, Odile Cue NORIEGA, M. T. O. SILVA, Eduardo ABRAMOF, Detlef SCHIKORA, Klaus LICHKA, JosRoberto LEITE

p.665 Raman Studies of Hexagonal GaN/AlxGa1-xN Multilayered Structures

Valery DAVYDOV, Albert KLOCHIKHIN, Igor GONCHARUK, Alexander SMIRNOV, Alexander USIKOV, Wsevolod LUNDIN, Eugeny ZAVARIN, Alexei SAKHAROV, Marina BAIDAKOVA, Jens STEMMER, Harald KLAUSING, David MISTELE

p.669 Strain Effects on Structural, Dielectric, and Lattice-Dynamical Properties of Short-Period GaN/AlN Superlattices

Jan-Martin WAGNER, Jerome GLEIZE, Friedhelm BECHSTEDT

p.673 Raman Scattering Characterization of Annealed GaNxAs1-x Layers

Takashi FURUHATA, Takeshi KITANO, Hiroyuki MAGARA, Atsushi MASUDA, So TANAKA, Akihiro MOTO, Mitsuo TAKAHASHI, Tatsuya TANABE, Shigenori TAKAGISHI, Akio YAMAMOTO, Akihiro HASHIMOTO

p.677 Optical Transitions in GaNAs/GaAs Single Quantum Well

X. D. LUO, Z. Y. XU, B. Q. SUN, Z. PAN, L. H. LI, Y. W. LIN, W. K. GE

Electronic Structure

p.681 Empirical Interatomic Potential Calculation for Compositional Instability of III-V Nitride Alloys in Lattice Mismatch Systems

Yoshihiro KANGAWA, Tomonori ITO, Atsushi MORI, Akinori KOUKITU

p.685 Theoretical Analysis of Multinary Nitride Semiconductors by Density Functional Theory

Takao MISAKI, Xiaoping WU, Akihiro WAKAHARA, Akira YOSHIDA

p.689 Influence of Biaxial Strain on Thermodynamic, Structural and Electronic Properties of InxGa1-xN Alloys

Lara Kuhl TELES, Luisa Maria Ribeiro SCOLFARO, Juergen FURTHMNULLER, Jose Roberto LEITE, Friedhelm BECHSTEDT

p.693 Electronic Structure Calculation of AlN, AlGaN2 and GaN in the Wurtzite Structure

Mitsutake OSHIKIRI, Ferdi ARYASETIAWAN

p.697 Nonuniform Contact Potential Profile of AlGaN/GaN on SiC Measured by Kelvin Probe Force Microscopy

Yasuyuki EGUCHI, Shigeru KISHIMOTO, Takashi MIZUTANI, Hiroyuki MASATO, Katsunori NISHII, Kaoru INOUE

p.701 Thermal Stability of Pd/Al0.11Ga0.89N Schottky Diodes

Subramaniam ARULKUMARAN, Takashi EGAWA, Hiroyasu ISHIKAWA, Takashi JIMBO, Masayoshi UMENO

P-Type Nitrides

p.705 Local Vibrational Modes in Mg-doped GaN as a Probe of Activation and Deactivation of Acceptors

Eiji KURIMOTO, Hiroshi HARIMA, Yoshihiro SONE, Toshiaki INOUE, Masaya ISHIDA, Mototaka TANEYA

p.709 Micro-Raman-Photoluminescence Study of Mg-doped GaN Materials Prepared by Metal Organic Chemical Vapor Deposition

Zhe Chua FENG, Soo Jin CHUA, Geraint A. EVANS, Kenneth P. J. WILLIAMS, G. David PITT

p.713 Photoluminescence of Mg-Diffused GaN Epilayer

Gwo-Jen JAN, Cheng-Wei WU, Chih-Ming LAI, Jia-Liang YEN, Ying-Jay YANG

p.717 Inhomogeneous Spatial Distribution of Acceptor-Related Recombination Centers in Mg-Doped GaN

Min YANG, Chinkyo KIM, Yoon-Ho CHOI, Min Hong KIM, Jaehyung YI, Ji-Na JEON, Meoung Whan CHO, Shi-Jong. LEEM, Yong-Hee LEE

p.721 Temperature Dependence of Magnesium Related Optical Transitions in GaN:Mg

S. STRAUF, S. ULRICH, P. MICHLER, J. GUTOWSKI, V. KIRCHNER, S. FIGGE, S. EINFELDT, D. HOMMEL

p.725 Selectively Enhanced Mg Incorporation into AlGaN Barrier Layer of Strained Layer SuperLattice

Toshio NISHIDA, Hisao SAITO, Kazuhide KUMAKURA, Toshiki MAKIMOTO, Naoki KOBAYASHI

p.728 Activation of Mg-Doped GaN by Thermal Annealing in Oxidizing Atmospheres

Ichitaro WAKI, Hiroshi FUJIOKA, Masaru OSHIMA, Hisayuki MIKI, Akira FUKIZAWA

p.732 Modulation Magnesium-Doping in AlGaN/GaN Superlattices

Xianglin LIU, Hairong YUAN, Da-Cheng LU, Xiaohui WANG

p.736 Temperature-Dependent Hall Study on p-Type GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Wen WANG, Wei LIU, Mao Sheng HAO, Soo Jin CHUA, Rong LIU

p.740 Characterization of Carbon Doped GaN Films Grown by Molecular Beam Epitaxy

Saburo SHIMIZU, Saki SONODA

p.744 Acceptor Activation of Mg-Doped GaN by Microwave Treatment

Tzong-Liang TSAI, Chung-Ying CHANG, Chih-Lih CHIANG, Chih-Sung CHANG, Charng-Shyang JONG, Tzer-Peng CHEN, Kuo-Hsin HUANG

p.746 Novel Methods of p-type Activation in GaN:Mg

Motonobu TAKEYA, Masao IKEDA

Processing & Etching

p.750 ICP Etching for the Fabrication of AlGaInN VCSELs with Dielectric Mirrors

H.-S. KIM, T. KIM, K.-S. KIM, I. M. WATSON, R. W. MARTIN, J. H. MaRSH, R. M. De La RUE, M. D. DAWSON

p.754 Bonding of GaN with Si using Selenium Sulphide (SeS2) and Laser Lift-Off

Jesudoss AROKIARAJ, Hiroyasu ISHIKAWA, Tetsuo SOGA, Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO

p.758 The Optical and Electrical Characteristics of CO2 Laser Treated Mg-Doped GaN Film

Wei-Chih LAI, Meiso YOKOYAMA, Jan-Dar GUO, Chia-hon SHEU, Tsung-Yu CHEN, Wen-Chung TSAI, Jian-Shihn TSANG, Shih-Hsiung CHANG, Simon M. SZE

p.762 Effect of Nitrogen Plasma Treatment on Mg-Doped GaN and Blue LED

Sang-Woo KIM, Chul HUH, Ji-Myon LEE, Hyunsoo KIM, Hyun-Min KIM, Hyunsang HWANG, Seong-Ju PARK

p.766 Evaluation of Dislocation Densities in n-GaN Films by Photoassisted Anodic Etching

Mitsugu OHKUBO

p.770 Photoassisted Anodic Etching of n-InN Films in an AGW Electrolyte

Mitsugu OHKUBO, Osamu TAKAI

p.774 Photoluminescence and Photoconductivity Studies of Reactive-Ion-Etched GaN on SiC Substrates

Roger J. REEVES, Oliver DICKIE, Bifeng RONG, Rebecca CHEUNG, Simon BROWN

p.778 Tree-like Features Formed on Photoelectrochemically Etched n-GaN Surfaces: Revelation of Threading Dislocations in GaN

Akio YAMAMOTO, Katsuhiko AZUMA, Tomomi YASUDA, Akihiro HASHIMOTO

p.782 In-Situ Dry Etch Monitoring for GaN/AlGaN Based Device Structures

Yves LACROIX, Takashi NAKANISHI, Shiro SAKAI

p.786 Electrical Properties of ICP Plasma-Damaged n-GaN

Hoi Wai CHOI, Soo Jin CHUA, Xinhai XU, Yuejun SUN

P-Type Contacts

p.790 Ti-Based Ohmic Contacts to p-type GaN/AlxGa1-xN Superlattices

I. ADESIDA, L. ZHOU, A. OSINSKY, J. W. YANG, M. A. KHAN

p.793 Transparent Low Resistance Ohmic Contact to p-type GaN and its Application to GaN Based Light Emitting Diodes

Jin-Kuo HO, Charng-Shyang JONG, Chien C. CHIU, Kwang-Kuo SHIH, Li-Chien CHEN, Fu-Rong CHEN, Ji-Jung KAI, Li CHANG

p.797 Low p-Type Contact Resistance Using Mg-Doped InGaN andˆBInGaN/GaN Superlattices

Kazuhide KUMAKURA, Toshiki MAKIMOTO, Naoki KOBAYASHI

p.801 Influence of Inhomogeneous Barrier on I-V Characteristics of Metal/GaN Schottky Diodes

Takayuki SAWADA, Yuji ITO, Naohito KIMURA, Kazuaki IMAI, Kazuhiko SUZUKI, Shiro SAKAI

p.805 Formation of Low-Resistance, Thermally Stable, and Highly Transparent Pt-Based Ohmic Contacts to Surface-Treated p-GaN

Ja-Soon JANG, Sang-Hon HAN, Sang-Woo KIM, Seong-Ju PARK, Tae-Yeon SEONG

p.809 The Role of Annealing Ambient on the Formation of Ni/Au Ohmic Contacts to GaN LEDs

Joon Seop KWAK, Jaehee CHO, Soohee CHAE, Ok Hyun NAM, Chulsoo SONE, Bong Jin KIM, Yongjo PARK

p.813 Electrical Properties of Pd-Based Ohmic Contact to p-GaN with Au Diffusion Barrier

Woo Jin KIM, Dae-Woo KIM, Jun Cheol BAE, Jae-Min MYOUNG, Hong Koo BAIK, Sung-Man LEE

p.817 Effect of Hydrogen Storage Materials on Ohmic Contact to p-GaN

Jun Cheol BAE, Dae-Woo KIM, Woo-Jin KIM, Jae-Min MYOUNG, Hong Koo BAIK, Sung-Man LEE, Cang Hee HONG

p.821 Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN

Yasuo KOIDE, Tomoyuki ARAI, Masanori MURAKAMI

p.825 The Effect of Surface Treatment on the Interfacial Reaction between Pd and p-GaN

Dae-Woo KIM, Joon Cheol BAE, Woo Jin KIM, Jae-Min MYOUNG, Hong Koo BAIK, Sung-Man LEE, Chang Hee HONG

p.829 Large Schottky Barriers and Memory Capability for Ni Contacts Formed on Low Mg-Doped p-GaN

Kenji SHIOJIMA, Shiro SAKAI

LEDs

p.833 High-Efficiency GaN/AlxGa1-xN Multi-Quantum Well Light Emitter Grown on Low-Dislocation Density AlxGa1-xN

Motoaki IWAYA, Ryo NAKAMURA, Shinji TERAO, Tsutomu UKAI, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI

p.837 339nm Deep-UV Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate

Nobuyuki OTSUKA, Ayumu TSUJIMURA, Yoshiaki HASEGAWA, Gaku SUGAHARA, Masahiro KUME, Yuzaburoh BAN

p.841 White Light Sources Based on InGaN

D. EISERT, U. STRAUSS, S. BADER, H.-J. LUGAUER, M. FEHRER, B. HAHN, J. BAUR, U. ZEHNDER, N. STATH, V. HNARLE

p.845 InGaN/GaN Blue Light Emitter Grown on Si(111) Using an AlAs Seed Layer

Armin DADGAR, JNurgen CHRISTEN, Stefan RICHTER, Frank BERTRAM, Annette DIEZ, JNurgen BLNASING, Alois KROST, AndrLe STRITTMATTER, Dieter BIMBERG, Assadullah ALAM, Michael HEUKEN

p.849 Quaternary AlInGaN-InGaN MQW Based Vertically Conducting Light Emitting Diodes on SiC

Vinod ADIVARAHAN, Ashay CHITNIS, Maxim SHATALOV, Alexander LUNEV, Jinwei YANG, Grigory SIMIN, M. Asif KHAN, Remis GASKA, Michael S. SHUR

p.853 Resonant Cavity Blue and Near Ultraviolet Light Emitting Devices

M. DIAGNE, Y. K. SONG, H. ZHOU, A. V. NURMIKKO, T. TAKEUCHI, R. P. SCHNEIDER, M. KRAMES, J. HAN

p.856 Improved Electrical Property of InGaN/GaN Light-Emitting Diodes by Using a Mg-Doped AlGaN/GaN Superlattices

Jinn-Kong SHEU, Gou-Chung CHI, Ming-Juin JOU

p.860 Role of Nanostructures in the Radiative Recombination Process of InGaN-Based Light-Emitting-Diodes

Ruisheng ZHENG, Tsunemasa TAGUCHI

p.864 Electroluminescence from p-GaN/n-InGaN MQW Hexagonal Microprism Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy

Tetsuya AKASAKA, Seigo ANDO, Naoki KOBAYASHI

p.868 Fabrication of Light Emitting Diodes with GaInN Multi-Quantum Wells on Si (111) Substrate by MOCVD

Masakazu ADACHI, Naohiro NISHIKAWA, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO

p.872 Short Period Alloy Superlattice for Transparent Conductive Layer of UV-Emitter

Toshio NISHIDA, Hisao SAITO, Kazuhide KUMAKURA, Toshiki MAKIMOTO, Naoki KOBAYASHI

p.875 Influence of the Thick GaN Buffer Growth Conditions on the Electroluminescence Properties of GaN/InGaN Multilayer Heterostructures

Alexander S. USIKOV, Wsevolod V. LUNDIN, Denis A. BEDAREV, Eugeniy E. ZAVARIN, Alexei V. SAKHAROV, Andrew F. TSATSUL'NIKOV, Zhores I. ALFEROV, Nikolai N. LEDENTSOV, Axel HOFFMANN, Dieter BIMBERG

Lasers

p.878 GaN-Based High Power Blue-Violet Laser Diodes

Tsuyoshi TOJYO, Takeharu ASANO, Katsunori YANASHIMA, Motonobu TAKEYA, Tomonori HINO, Satoru KIJIMA, Shinro IKEDA, Shinichi ANSAI, Katsuyoshi SHIBUYA, Shu GOTO, Shigetaka TOMIYA, Kaori NAGANUMA, Yoshifumi YABUKI, Shiro UCHIDA, Masao IKEDA

p.883 Fabrication of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates by Laser Lift-Off

W. S. WONG, M. KNEISSL, P. MEI, D. W. TREAT, M. TEEPE, N. M. JOHNSON

p.886 RT-CW Operation of GaN-Based Laser Diodes Improved by GaN/GaInN Optical Guiding Layers

Masayoshi KOIKE, Shiro YAMASAKI, Seiji NAGAI, Yuta TEZEN, Sho IWAYAMA, Akira KOJIMA, Toshio HIRAMATSU, Tamiyo UMEZAKI, Masaru ITOH, Hiroshi YAMASHITA, Masahiro OHASHI, Akihiko KIMURA, Mitsuo SATO, Kinnya OHGUCHI

p.889 Novel Design Proposed for Nitride VCSELs

Pawel MALCKOWIAK, Robert Piotr SARZALA, Wloozimierz NAKWASKI

p.892 Analysis of Lateral Transverse Modes of Ridge-Geometry AlGaInN Laser Diodes

Shigetoshi ITO, Yukio YAMASAKI, Susumu OMI, Tomoki OHNO, Kunihiro TAKATANI, Toshiyuki OKUMURA, Yoshihiro UETA, Yuhzoh TSUDA, Takayuki YUASA, Takeshi KAMIKAWA, Daisuke HANAOKA, Masaya ISHIDA, Mototaka TANEYA

p.895 On the Feasibility of Fundamental-Mode Operation in Unstable-Resonator InGaN Lasers

Weng W. CHOW, Hiroshi AMANO, Isamu AKASAKI

p.899 Present Status of InGaN-Based Light-Emitting Diodes and Laser Diodes

Shin-ichi NAGAHAMA, Naruhito IWASA, Masayuki SENOH, Toshio MATUSHITA, Yasunobu SUGIMOTO, Hiroyuki KIYOKU, Tokuya KOZAKI, Masahiko SANO, Hiroaki MATSUMURA, Hitoshi UMEMOTO, Kazuyuki CHOCHO, Takashi MUKAI

p.903 Advances in Blue Laser Diode Development for High Resolution Printing

Michael KNIEISSL, Linda T. ROMANO, Chris. G. Van de WALLE, John E. NORTHRUP, Willam S. WONG, David W. TREAT, Mark TEEPE, Naoko MIYASHITA, Noble M. JOHNSON

Detectors

p.907 GaN-Based Resonant Cavity-Enhanced UV-Photodetectors

Yosuke TOYOURA, Kazuhide KUSAKABE, Takayuki YAMADA, Ryo BANNAI, Akihiko KIKUCHI, Katsumi KISHINO

p.911 Solar-Blind AlGaN PIN Hetero Junction Photodiode

Akira HIRANO, Cyril PERNOT, Motoaki IWAYA, Theeradetch DETCHPROHM, Hiroshi AMANO, Isamu AKASAKI

p.915 UV Solar Cells Based on Mg-Doped Hydrogenated GaN on Glass Substrates grown at 380ì·C

Shigeru YAGI, Seiji SUZUKI

p.919 GaN Thin Film Gas Sensors

Dae-Sik LEE, Chang-Hyun SHIM, Jung-Hee LEE, Duk-Dong LEE

FETs, SAW & Field Emitters

p.923 Indium-Doping Enhanced Two-Dimensional-Electron-Gas Performance in AlGaN/GaN Heterostructures

Hairong YUAN, Da-Cheng LU, Xianglin LIU, Peide HAN, Xiao hui WANG, Du WANG

p.927 Fabrication of AlGaN/GaN HEMTs with Buried p-Layers

K. SHIOJIMA, N. SHIGEKAWA, T. SUEMITSU

p.931 Comparison of Ion Implantation Approaches in the Fabrication of AlGaN/GaN HFETs: Classical vs. Through the Gate Metal

David W. DISANTO, Hassan MAHER, C. R. BOLOGNESI, James B. WEBB

p.934 Properties of As-Grown, Chemically Treated and Thermally Oxidized Surfaces of AlGaN/GaN Heterostructure

Shinya OOTOMO, Susumu OYAMA, Tamotsu HASHIZUME, Hideki HASEGAWA

p.938 Effect of Gate Leakage Current on Noise in AlGaN/GaN HFETs

Sergey L. RUMYANTSEV, Nezih PALA, Michael S. SHUR, Michael E. LEVINSHTEIN, Remis GASKA, Xuhong HU, Jinwei YANG, Grigory SIMIN, M. Asif KHAN

p.942 Technology and Performance of AlGaN/GaN HEMTs Fabricated on 2-Inch Epitaxy for Microwave Power Applications

Richard LOSSY, Jochen HILSENBECK, Joachim WNURFL, Klaus KNOHLER, Harald OBLOH

p.946 Large Periphery AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

Xuhong HU, Ahmad TARAKJI, A. KUMAR, Grigory SIMIN, Jinwei YANG, M. Asif KHAN, Remis GASKA, Michael S. SHUR

p.949 Theoretical Comparison of AlxGa1-xN/GaN (x=0.2 and 0.4) HJFETs Based on Full Band Monte Carlo Simulation

Yuji ANDO, Walter CONTRATA, Hironobu MIYAMOTO, Kohji MATSUNAGA, Masaaki KUZUHARA, Kazuaki KUNIHIRO, Kensuke KASAHARA, Tatsuo NAKAYAMA, Nobuyuki HAYAMA, Yuji TAKAHASHI, Yasuo OHNO

p.953 Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors at High Electron Densities