Y-Z

YABLONSKII G. P.

Near-Band-Edge Recombination in GaN, GaN:Mg and GaN:SiˆBbetween 12 and 650K

YABUKI Yoshifumi

GaN-Based High Power Blue-Violet Laser Diodes

YAGI Eiichi

Growth and Characterization of Tb Doped GaN

YAGI Shigeru

UV Solar Cells Based on Mg-Doped Hydrogenated GaN on Glass Substrates grown at 380ì·C

YAMADA Kazuhiro

Transmission Electron Microscopy Study of Selective Area Growth of GaN on (111)Si using AlGaN as an Intermediate Layer

YAMADA Koichiro

Gas Source Molecular Beam Epitaxy Growth of Polycrystalline GaN on Metal Substrate and the Observation of Strong Photoluminescence Emision

YAMADA Koji

Distribution of Below-Gap States in GaN-based Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence

YAMADA Masanori

Gas-Source MBE Growth of GaN Films Using Tertiarybutylhydrazine as a Nitrogen Precursor

YAMADA Norihide

Temperature Dependent Carrier Dynamics in GaInN/GaN Multiple Quantum Wells with Varying In Composition

YAMADA Takashi

Observation of the Early Stages and 3D-2D Transition of MOCVD Grown GaN with LT-GaN Buffer Layer

YAMADA Takayuki

Reduction of Threading Dislocations in RF-MBE Grown Polarity Controlled GaN by AlN Multiple Interlayers

GaN-Based Resonant Cavity-Enhanced UV-Photodetectors

YAMADA Yoichi

Temperature Dependent Carrier Dynamics in GaInN/GaN Multiple Quantum Wells with Varying In Composition

YAMAGUCHI Masahito

Selective Growth of GaN Microstructures on (111)Facets of a (001)Si Substrate by MOVPE

Photoluminescence Spectra and Impurity Incorporation in an SAG-ELO GaN by MOVPE

YAMAGUCHI Shigeo

Effect of Carrier Gas on the Properties of MOVPE-Grown GaN and GaN/AlGaN MQWs: a Comparison of H2 to N2 as a Carrier Gas

Dynamical Process of Mass Transport in GaN

YAMAMOTO Akio

An Indium Surfactant Effect in Cubic GaN RF-MBE Growth

Growth Rate and Its Limiting Process for Metalorganic Vapor Phase Epitaxial InN

Significance of the Suppression of Substrate Surface Nitridation for Epitaxial Growth of Wurtzite InN on GaP(111) and InP(111) Substrates

Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN

Raman Scattering Characterization of Annealed GaNxAs1-x Layers

Tree-like Features Formed on Photoelectrochemically Etched n-GaN Surfaces: Revelation of Threading Dislocations in GaN

YAMAMOTO J.

Improved 250nm UV PL Spectra from BAlGaN/AlN MQW on 6H-SiC Substrate by MOVPE using TEB

YAMAMOTO Yoichiro

Photoluminescence Spectra and Impurity Incorporation in an SAG-ELO GaN by MOVPE

YAMASAKI Shiro

RT-CW Operation of GaN-Based Laser Diodes Improved by GaN/GaInN Optical Guiding Layers

YAMASAKI Yukio

Analysis of Lateral Transverse Modes of Ridge-Geometry AlGaInN Laser Diodes

YAMASHITA Hideaki

Gas-Source MBE Growth of GaN Films Using Tertiarybutylhydrazine as a Nitrogen Precursor

YAMASHITA Hiroshi

RT-CW Operation of GaN-Based Laser Diodes Improved by GaN/GaInN Optical Guiding Layers

YAMASHITA Takashi

MBE growth of InN on Si toward Hole-Barrier Structure in Si Devices

YANASHIMA Katsunori

Non-Radiative Nature of Threading Dislocations in GaN Grown by Metal-Organic Chemical Vapor Deposition

GaN-Based High Power Blue-Violet Laser Diodes

YANG C. C.

Indium Aggregation and Phase Seperation in InGaN/GaN Quantum Wells Studied with High Resolution Transmission Electron Microscopy

Optical Characterization for Indium Segregation Studies inˆBInGaN/GaN Quantum Wells

YANG G. M.

Control of Self-Limited (0001) Facet in Selectively Grown GaN Hexagonal Structures with Dot Patterned Mask

YANG Gue Mo

The Effects of the Growth Rate along with AlN Nucleation Layer on the Qualities of GaN Epilayers Grown on Si(111) Substrate Using 3C-SiC Intermediate Layer

YANG Gye Mo

The Effects of Thermal Annealing Treatments on InGaN/GaN Quantum Well Structures

YANG Hui

MOCVD Growth of Cubic GaN: Materials and Devices

YANG Jeon Wook

The Effects of Thermal Annealing Treatments on InGaN/GaN Quantum Well Structures

YANG Jinwei

Pulsed MOCVD Technique for Lateral Overgrowth of GaN on SiC with Conducting Buffer Layers

Optical Properties of AlInGaN Alloys and AlInGaN/InGaN Multiple Quantum Wells

Quaternary AlInGaN-InGaN MQW Based Vertically Conducting Light Emitting Diodes on SiC

Effect of Gate Leakage Current on Noise in AlGaN/GaN HFETs

Large Periphery AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

YANG J. W.

Ti-Based Ohmic Contacts to p-type GaN/AlxGa1-xN Superlattices

YANG Min

Inhomogeneous Spatial Distribution of Acceptor-Related Recombination Centers in Mg-Doped GaN

YANG Seung Hyun

Structural and Optical Characterization of Thick GaN Films Grown by Direct Reaction of Ga and NH3

YANG Ying-Jay

Photoluminescence of Mg-Diffused GaN Epilayer

YANO Masahiro

Heteroepitaxy and Characterization of GaN with Low Dislocation Density on Periodically Grooved Sapphire Substrate

YAP Yoke K.

Fabrication of Conductive AlN Films by Pulsed Laser Deposition

YASUDA Tomomi

Tree-like Features Formed on Photoelectrochemically Etched n-GaN Surfaces: Revelation of Threading Dislocations in GaN

YASUI Knaji

Epitaxial Growth of AlN on Sapphire by ECR Plasma Assisted MOCVD under Mirror Field Conditions

YEN Jia-Liang

Photoluminescence of Mg-Diffused GaN Epilayer

YI Jaehyung

Inhomogeneous Spatial Distribution of Acceptor-Related Recombination Centers in Mg-Doped GaN

YODO Tokuo

Influences of Inert Nitrogen Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions on Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(111) Substrates by Moleclular-Beam Epitaxy Assisted by Electron Cyclotron Resonance

YOKOYAMA Meiso

The Optical and Electrical Characteristics of CO2 Laser Treated Mg-Doped GaN Film

YOON Euijoon

Growth of AlGaN/GaN Heterostructure at Various NH3 Flows and Reactor Pressures and Their 2DEG Transport Properties

YOSHIDA Akira

Photoluminescence Properties of Eu-Doped GaN by Ion Implantation

Temperature Dependence of Aluminum Nitride Reflectance Spectra

Theoretical Analysis of Multinary Nitride Semiconductors by Density Functional Theory

YOSHIDA Seikoh

Heteroepitaxial Growth of GaN on Si Substrate Coated with a Thin Flat SiC Buffer layer

Nitride-Rich GaN1-xPx Growth by Photo-Assisted Metalorganic Chemical Vapor Deposition and Its Properties for a Light-Emitting Diode

Fabrication of a Heterostructure Field-Effect Transistor Using AlGaN/GaN

YOSHIKAWA Akihiko

A New Approach to Grow GaN by Low-Pressure MOCVD Using a Three Steps Tecnique

Coaxial Impact Collision Ion Scattering Spectroscopy (CAICISS) Analysis for the Polarity Conversion of GaN Films Grown on Nitrided Sapphire Substrates

Direct Observation of Defect Structures in Ga-Polar and N-Polar GaN Epilayers by Cross-Sectional Cathodoliminescence

YOSHIMOTO Mamoru

Influences of Inert Nitrogen Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions on Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(111) Substrates by Moleclular-Beam Epitaxy Assisted by Electron Cyclotron Resonance

Epitaxial Growth of AlN on Si(111) by Laser MBE

Correlation between Optical Emission and Disordering of Indium in InxGa1-xN Single Quantum Wells Analyzed by Coaxial Impact Collision Ion Scattering Spectroscopy

YOSHIMOTO Masahiro

MBE growth of InN on Si toward Hole-Barrier Structure in Si Devices

YOSHIMURA Masashi

Fabrication of Conductive AlN Films by Pulsed Laser Deposition

YU Guanghui

Direct Observation of Defect Structures in Ga-Polar and N-Polar GaN Epilayers by Cross-Sectional Cathodoliminescence

YU Phil-Won

Evidence of Localized States in InGaN/GaN Double Heterostructures

YU Sung Kyu

Evidence of Localized States in InGaN/GaN Double Heterostructures

YUAN Hairong

Modulation Magnesium-Doping in AlGaN/GaN Superlattices

Indium-Doping Enhanced Two-Dimensional-Electron-Gas Performance in AlGaN/GaN Heterostructures

YUASA Takayuki

Analysis of Lateral Transverse Modes of Ridge-Geometry AlGaInN Laser Diodes

YUKAWA Yohei

Effect of Carrier Gas on the Properties of MOVPE-Grown GaN and GaN/AlGaN MQWs: a Comparison of H2 to N2 as a Carrier Gas

Dynamical Process of Mass Transport in GaN

ZAVARIN Eugene E.

Time-Resolved Photoluminescence of InGaN/GaN MQW Structures

ZAVARIN Eugeniy E.

Influence of the Thick GaN Buffer Growth Conditions on the Electroluminescence Properties of GaN/InGaN Multilayer Heterostructures

ZAVARIN Eugeny

Raman Studies of Hexagonal GaN/AlxGa1-xN Multilayered Structures

ZEHNDER U.

White Light Sources Based on InGaN

ZHANG Jianping

Pulsed MOCVD Technique for Lateral Overgrowth of GaN on SiC with Conducting Buffer Layers

Optical Properties of AlInGaN Alloys and AlInGaN/InGaN Multiple Quantum Wells

ZHANG Ling

Epitaxial Lateral Overgrowth of GaN on Si Substrates by Hydride Vapor Phase Epitaxy

ZHANG Rong

Epitaxial Lateral Overgrowth of GaN on Si Substrates by Hydride Vapor Phase Epitaxy

ZHANG Shuming

MOCVD Growth of Cubic GaN: Materials and Devices

ZHANG Wei

Time-Modulated Growth of Thick GaN by Hydride Vapor Phase Epitaxy : Suppression of Dislocations

Effect of High Temperature GaN Buffer Layer on the Growth of Thick GaN by Hydride Vapor Phase Epitaxy

ZHAO Degang

MOCVD Growth of Cubic GaN: Materials and Devices

ZHAO Fanghai

Influence of Si Doping on Optical Properties of Cubic GaN Grown on GaAs (001) Substrates by Metalorganic Vapor Phase Epitaxy

Effect of an Intermediate Layer on Cubic GaN Grown on GaAs (100): Substrate Protection and Strain Relaxation

ZHAO Lijie

Measurement and Minimization of Wing Tilt in Laterally Overgrown GaN on a SiO2 Mask

ZHELEVA Tsvetanka S.

Pendeo-Epitaxial Growth and Characterization of Gallium Nitride and Related Materials

ZHENG Lianxi

MOCVD Growth of Cubic GaN: Materials and Devices

ZHENG Ruisheng

Role of Nanostructures in the Radiative Recombination Process of InGaN-Based Light-Emitting-Diodes

ZHOU H.

Resonant Cavity Blue and Near Ultraviolet Light Emitting Devices

ZHOU L.

Ti-Based Ohmic Contacts to p-type GaN/AlxGa1-xN Superlattices

ZINOV'EV Nick N.

Time-Resolved Photoluminescence of InGaN/GaN MQW Structures

ZOLPER John C.

Prospects for Gallium Nitride Based Electronic Devices

ZORMAN Chris A.

Pendeo-Epitaxial Growth and Characterization of Gallium Nitride and Related Materials

ZUKAUSKAS Arturas

Optical Properties of AlInGaN Alloys and AlInGaN/InGaN Multiple Quantum Wells