S-T

SAEKI Hiayuki

Indium Silicon Co-Doping in AlGaN/GaN Multiple Quantum Wells

SAITO Hisao

Selectively Enhanced Mg Incorporation into AlGaN Barrier Layer of Strained Layer SuperLattice

Short Period Alloy Superlattice for Transparent Conductive Layer of UV-Emitter

SAITO Y.

Annealing Effect of Low Temperature Growth of InN Films by RF-MBE

SAITOH Tadashi

Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors at High Electron Densities

SAKAGUCHI Harunori

MOVPE Growth of 4-inch GaN Epitaxial Wafers for FETs on a-face and c-face Sapphire Substrates

SAKAI Hiroaki

Surface Acoustic Wave Filters at 2.4GHz Using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD

SAKAI Shiro

Induced Biaxial Stress in a GaN Film on a Sapphire Substrate

Comparison of the Optical Properties in InGaN/GaN Quantum Well Structures Grown on (0001) and (11-20) Sapphire Substrates

Electronic Structures of GaNP and InNAs Ordered alloys Calculated by the Pseudopotential Method

Cracking of GaN on Sapphire from Induced Non-Uniformity in Residual Stress

Photoluminescence Properties of Eu-Doped GaN by Ion Implantation

The Investigation on the Emission Mechanism of InGaN/GaN Quantum Well Structure

Indium Silicon Co-Doping in AlGaN/GaN Multiple Quantum Wells

In-Situ Dry Etch Monitoring for GaN/AlGaN Based Device Structures

Influence of Inhomogeneous Barrier on I-V Characteristics of Metal/GaN Schottky Diodes

Large Schottky Barriers and Memory Capability for Ni Contacts Formed on Low Mg-Doped p-GaN

SAKHAROV Alexei

Raman Studies of Hexagonal GaN/AlxGa1-xN Multilayered Structures

SAKHAROV Alexei V.

Influence of Growth Interruptions and Gas Ambient on Optical and Structural Properties of InGaN/GaN Multilayer Structures

Influence of the Thick GaN Buffer Growth Conditions on the Electroluminescence Properties of GaN/InGaN Multilayer Heterostructures

SALZMAN Joseph

Geometrical Magneto Resistance Measurement of Vertical Conductivity in GaN and Comparison With Lateral Transport

SANI R. A.

GaN Thin Films Grown on Hydrogen Plasma Cleaned Sapphire Substrates by Plasma Assisted MOCVD

SANO Masahiko

Present Status of InGaN-Based Light-Emitting Diodes and Laser Diodes

SANO Masatoshi

GaN Thin Film Grown by Reactive Close-Spaced Method at 750ì·C

SANO Shigekazu

Heteroepitaxy and Characterization of GaN with Low Dislocation Density on Periodically Grooved Sapphire Substrate

SANORPIM S.

Detection and Analysis of Hexagonal Phase Generation in Selective-Area Growth of Cubic GaN by Metalorganic Vapor Phase Epitaxy

SAPEGA V. F.

Magneto-Spectroscopy of Donor-Bound Excitons in Homoepitaxial GaN

SARAIE Junji

MBE growth of InN on Si toward Hole-Barrier Structure in Si Devices

SARZALA Robert Piotr

Novel Design Proposed for Nitride VCSELs

SASAKI Chiharu

Temperature Dependent Carrier Dynamics in GaInN/GaN Multiple Quantum Wells with Varying In Composition

SASAKI Tadashi

MOVPE Growth of 4-inch GaN Epitaxial Wafers for FETs on a-face and c-face Sapphire Substrates

SASAKI Takatomo

Fabrication of Conductive AlN Films by Pulsed Laser Deposition

SATAKE Akihiro

Non-Radiative Nature of Threading Dislocations in GaN Grown by Metal-Organic Chemical Vapor Deposition

SATO Mitsuo

RT-CW Operation of GaN-Based Laser Diodes Improved by GaN/GaInN Optical Guiding Layers

SATOH Fumitaka

Thermodynamic Analysis and In Situ Gravimetric Monitoring of GaN Decomposition

SAUER Rolf

Resolved Band-Edge Luminescence of AlN on Different Substrates

High-Resolution Polariton Spectra of Homoepitaxial GaN: Temperature Dependence

SAWADA Takayuki

Influence of Inhomogeneous Barrier on I-V Characteristics of Metal/GaN Schottky Diodes

SAWAKI Nobuhiko

Epitaxial Lateral Overgrowth of GaN using Tungsten Nitride (WNx) Mask via MOVPE and Electrical Properties of WNx/GaN Contacts

Transmission Electron Microscopy Study of Selective Area Growth of GaN on (111)Si using AlGaN as an Intermediate Layer

Selective Growth of GaN Microstructures on (111)Facets of a (001)Si Substrate by MOVPE

Photoluminescence Spectra and Impurity Incorporation in an SAG-ELO GaN by MOVPE

UV Photoemission and Field Emission Study of AlGaN/GaN Emitters

SCHIKORA Detlef

Overdamped Electron Plasma Oscillations in Cubic AlxGa1-xN Layers Observed by Raman Scattering Spectroscopy

SCHINELLER B.

Near-Band-Edge Recombination in GaN, GaN:Mg and GaN:SiˆBbetween 12 and 650K

SCHMIDT Natalia M.

Time-Resolved Photoluminescence of InGaN/GaN MQW Structures

SCHNEIDER Richard

Polarization Control in Nitride-Based Semiconductor

Temperature Dependent Carrier Dynamics in GaInN/GaN Multiple Quantum Wells with Varying In Composition

SCHNEIDER R. P.

Resonant Cavity Blue and Near Ultraviolet Light Emitting Devices

SCHOLZ Ferdinand

Correlation Between Deep Defects and Persistent Photoconductivity in Undoped GaN and AlGaN Layers

Characterization of Short Channel AlGaN/GaN HEMTs-Breakdown Voltage and Gate Recess

SCH�NON O.

Structural Properties, In Distribution, and Photoluminescence of Multiple InGaN/GaN Quantum Well Structures

Near-Band-Edge Recombination in GaN, GaN:Mg and GaN:SiˆBbetween 12 and 650K

SCHRENK Eike

Correlation Between Deep Defects and Persistent Photoconductivity in Undoped GaN and AlGaN Layers

SCHRUPP David

Influence of the Ion Irradiation During Low-Energy Nitrogen Ion Assisted Deposition of Wurtzitic Gallium Nitride Films on Sapphire

SCHWEGLER Veit

High-Resolution Polariton Spectra of Homoepitaxial GaN: Temperature Dependence

SCHWEIZER Heinz

Characterization of Short Channel AlGaN/GaN HEMTs-Breakdown Voltage and Gate Recess

SCHWERTBERGER Ruth

Influence of the Ion Irradiation During Low-Energy Nitrogen Ion Assisted Deposition of Wurtzitic Gallium Nitride Films on Sapphire

SCOLFARO Lu�Lisa Maria Ribeiro

Cubic AlGaN/GaN and GaN/InGaN Heterostructures:Effects of p-type Doping

SCOLFARO Luisa Maria Ribeiro

Influence of Biaxial Strain on Thermodynamic, Structural and Electronic Properties of InxGa1-xN Alloys

SEKI Akihisa

Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN

SEKI Hisashi

Influence of Growth Temperature on the Crystalline Quality of Hexagonal GaN Layer on GaAs (111)A by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy

SEMCHINOVA Olga

Raman Scattering in Hexagonal AlxGa1-xN Alloys and Optical Modes Behavior

SENOH Masayuki

Present Status of InGaN-Based Light-Emitting Diodes and Laser Diodes

SEONG Tae-Yeon

Role of In on the Formation of Wire Structures on GaNAs Surfaces Grown by MOMBE

Formation of Low-Resistance, Thermally Stable, and Highly Transparent Pt-Based Ohmic Contacts to Surface-Treated p-GaN

SETIAGUNG Casimirus

MOVPE Growth and Optical Properties of GaN/AlGaN Superlattices as Pseudo-Ternary Alloys

SHATALOV Maxim

Optical Properties of AlInGaN Alloys and AlInGaN/InGaN Multiple Quantum Wells

Quaternary AlInGaN-InGaN MQW Based Vertically Conducting Light Emitting Diodes on SiC

SHEN X. Q.

Optical and Electrical Properties of GaN Films with Ga-Polarity Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

SHEN Xu-Qiamg

Growth and Characterization of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC by RF-MBE

SHEU Chia-hon

The Optical and Electrical Characteristics of CO2 Laser Treated Mg-Doped GaN Film

SHEU Jinn-Kong

Improved Electrical Property of InGaN/GaN Light-Emitting Diodes by Using a Mg-Doped AlGaN/GaN Superlattices

SHIBATA Junko

Surface Acoustic Wave Filters at 2.4GHz Using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD

SHIBATA Tomohiko

Surface Acoustic Wave Filters at 2.4GHz Using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD

SHIBUYA Katsuyoshi

GaN-Based High Power Blue-Violet Laser Diodes

SHIGEKAWA N.

Fabrication of AlGaN/GaN HEMTs with Buried p-Layers

SHIH Kwang-Kuo

Transparent Low Resistance Ohmic Contact to p-type GaN and its Application to GaN Based Light Emitting Diodes

SHIM Chang-Hyun

GaN Thin Film Gas Sensors

SHIMENO Masakazu

Influences of Inert Nitrogen Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions on Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(111) Substrates by Moleclular-Beam Epitaxy Assisted by Electron Cyclotron Resonance

SHIMIZU M.

Optical and Electrical Properties of GaN Films with Ga-Polarity Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

SHIMIZU S.

Optical and Electrical Properties of GaN Films with Ga-Polarity Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

SHIMIZU Saburo

InGaN Film Growth on Polarity Controlled GaN Buffer Layer by Ammonia-MBE

Characterization of Carbon Doped GaN Films Grown by Molecular Beam Epitaxy

SHIMOYAMA Norio

Role of In on the Formation of Wire Structures on GaNAs Surfaces Grown by MOMBE

SHIN Eun-Joo

Evidence of Localized States in InGaN/GaN Double Heterostructures

SHIOJIMA K.

Fabrication of AlGaN/GaN HEMTs with Buried p-Layers

SHIOJIMA Kenji

Large Schottky Barriers and Memory Capability for Ni Contacts Formed on Low Mg-Doped p-GaN

SHIRAISHI Tadashi

Crystal Growth of AlN on Al/Sapphire Interdegital Transducer at the Resonance Point of Nitrogen-Electron Cyclotron Plasma

SHIRAKATA Sho

Optical Properties of GaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy Under Various Growth Conditions

SHIRAKI Y.

Detection and Analysis of Hexagonal Phase Generation in Selective-Area Growth of Cubic GaN by Metalorganic Vapor Phase Epitaxy

SHIRAKI Yasuhiro

Influence of Si Doping on Optical Properties of Cubic GaN Grown on GaAs (001) Substrates by Metalorganic Vapor Phase Epitaxy

Effect of an Intermediate Layer on Cubic GaN Grown on GaAs (100): Substrate Protection and Strain Relaxation

MOVPE Growth and Optical Properties of GaN/AlGaN Superlattices as Pseudo-Ternary Alloys

SHISHIDO Mikio

MOVPE Growth and Optical Properties of GaN/AlGaN Superlattices as Pseudo-Ternary Alloys

SHU Chen-Ke

The Electronic Structure and Optical Properties of Phosphorus Implanted GaN Films

SHU C. K.

Characteristics of Optical Properties of the Interrupt Growth Method on InGaN/GaN MQW Structures

Effects in Carrier Dynamics of Isoelectronic In Doped in GaN Films Grown by Metaloganic Vapor Phase Epitaxy

SHUBINA T. V.

Polarized Photoluminescence Spectroscopy of HVPE GaN with Different Dislocation Structures

SHUR Michael S.

Optical Properties of AlInGaN Alloys and AlInGaN/InGaN Multiple Quantum Wells

Quaternary AlInGaN-InGaN MQW Based Vertically Conducting Light Emitting Diodes on SiC

Effect of Gate Leakage Current on Noise in AlGaN/GaN HFETs

Large Periphery AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

SIENZ Stefan

Influence of the Ion Irradiation During Low-Energy Nitrogen Ion Assisted Deposition of Wurtzitic Gallium Nitride Films on Sapphire

SILOV A.

CBE Growth and Characterization of InGaAsN/InP Quantum Well Structures using NH3

SILVA M. T. O.

Overdamped Electron Plasma Oscillations in Cubic AlxGa1-xN Layers Observed by Raman Scattering Spectroscopy

SIMIN Grigory

Optical Properties of AlInGaN Alloys and AlInGaN/InGaN Multiple Quantum Wells

Quaternary AlInGaN-InGaN MQW Based Vertically Conducting Light Emitting Diodes on SiC

Effect of Gate Leakage Current on Noise in AlGaN/GaN HFETs

Large Periphery AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

SIMON J.

Strain Relaxation Mechanisms in Hexagonal and Cubic Nitride Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

SINHA S. K.

Mesoscopic Capacitor Effect in GaN/AlGaN Quantum Wells

SIPAHI Guilherme Matos

Cubic AlGaN/GaN and GaN/InGaN Heterostructures:Effects of p-type Doping

SMIRNOV Alexander

Raman Scattering in Hexagonal AlxGa1-xN Alloys and Optical Modes Behavior

Raman Studies of Hexagonal GaN/AlxGa1-xN Multilayered Structures

SMORCHKOVA Yulia

Optimization of the Electron Mobilities in GaN Grown by Plasma-Assisted Molecular Beam Epitaxy

SOERENSEN Gerog

A New KOH-Based UV Assisted Wet Etching Technique and its Application to AlGaN/GaN HFET Fabrication and Characterization

SOGA Tetsuo

Bonding of GaN with Si using Selenium Sulphide (SeS2) and Laser Lift-Off

SOMEYA Takao

Effect of Strain Relaxation and Screening on Intersubband Transitions in GaN/AlGaN Multiple Quantum Wells

Growth and Physics of Nitride-Based Quantum Dots for Optelectronics Applications

High-Density InGaN Quantum Dots Fabricated by Selective MOCVD Growth

Distribution of Below-Gap States in GaN-based Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence

SONE Cheolsoo

High-Quality Laterally Overgrown GaN Layers without Crystallographic Tilting and Voids

SONE Chulsoo

The Role of Annealing Ambient on the Formation of Ni/Au Ohmic Contacts to GaN LEDs

SONE Yoshihiro

Local Vibrational Modes in Mg-doped GaN as a Probe of Activation and Deactivation of Acceptors

SONG Jin-Joo

Optical Properties of (Al)GaN-Based Structures for Near- and Deep-Ultraviolet Emitters

SONG Y. K.

Resonant Cavity Blue and Near Ultraviolet Light Emitting Devices

SONG Young Ho

The Effects of the Growth Rate along with AlN Nucleation Layer on the Qualities of GaN Epilayers Grown on Si(111) Substrate Using 3C-SiC Intermediate Layer

The Effects of Thermal Annealing Treatments on InGaN/GaN Quantum Well Structures

SONODA S.

Optical and Electrical Properties of GaN Films with Ga-Polarity Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

SONODA Saki

InGaN Film Growth on Polarity Controlled GaN Buffer Layer by Ammonia-MBE

Characterization of Carbon Doped GaN Films Grown by Molecular Beam Epitaxy

SOTA Takayuki

Spectroscopic Studies in InGaN Single-Quantum-Well Amber Light-Emitting Diodes

Photoreflectance Spectra of Excitonic Polaritons in Wurtzite GaN

SPECK James S.

Measurement and Minimization of Wing Tilt in Laterally Overgrown GaN on a SiO2 Mask

Morphological Evolution During Growth of InGaN Laser Diodes on Laterally Overgrown GaN on Sapphire

Detection and Identification of Deep Levels in n-GaN

SPECK Jim

Optimization of the Electron Mobilities in GaN Grown by Plasma-Assisted Molecular Beam Epitaxy

STATH N.

White Light Sources Based on InGaN

STEMMER Jens

Raman Scattering in Hexagonal AlxGa1-xN Alloys and Optical Modes Behavior

Raman Studies of Hexagonal GaN/AlxGa1-xN Multilayered Structures

STEPHAN T.

Structural Properties, In Distribution, and Photoluminescence of Multiple InGaN/GaN Quantum Well Structures

STEPHENSON G. B.

Measurement and Minimization of Wing Tilt in Laterally Overgrown GaN on a SiO2 Mask

STEPNIEWSKI R.

Magneto-Spectroscopy of Donor-Bound Excitons in Homoepitaxial GaN

Ground and Excited Excitonic Resonances in Heteroepitaxial GaN Layers: A Magnetooptical Study

STRAUF S.

Temperature Dependence of Magnesium Related Optical Transitions in GaN:Mg

STRAUSS U.

White Light Sources Based on InGaN

STRITTMATTER Andr�Le

InGaN/GaN Blue Light Emitter Grown on Si(111) Using an AlAs Seed Layer

SUEMASU Takashi

HVPE/MOMBE Hybrid Growth of High Quality Hexagonal GaN on SiO2 Substrates with an AlN Buffer Layer

SUEMITSU T.

Fabrication of AlGaN/GaN HEMTs with Buried p-Layers

SUEMOTO Ryuji

Gas-Source MBE Growth of GaN Films Using Tertiarybutylhydrazine as a Nitrogen Precursor

SUEMUNE Ikuo

Role of In on the Formation of Wire Structures on GaNAs Surfaces Grown by MOMBE

SUGAHARA Gaku

339nm Deep-UV Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate

SUGIANTO

GaN Thin Films Grown on Hydrogen Plasma Cleaned Sapphire Substrates by Plasma Assisted MOCVD

SUGIHARA Daisuke

Reduction of Threading Dislocations in RF-MBE Grown Polarity Controlled GaN by AlN Multiple Interlayers

SUGIMOTO Kose

Photoluminescence Excitation Spectrum of Undoped and Zn Doped InGaN Microcrystals

SUGIMOTO Yasunobu

Present Status of InGaN-Based Light-Emitting Diodes and Laser Diodes

SUH Eun-Kyung

Structural and Optical Characterization of Thick GaN Films Grown by Direct Reaction of Ga and NH3

SUMIYA Masamoto

Epitaxial Growth of AlN on Si(111) by Laser MBE

SUMIYA Masatomo

Correlation between Optical Emission and Disordering of Indium in InxGa1-xN Single Quantum Wells Analyzed by Coaxial Impact Collision Ion Scattering Spectroscopy

SUN B. Q.

Optical Transitions in GaNAs/GaAs Single Quantum Well

SUN Yuanping

MOCVD Growth of Cubic GaN: Materials and Devices

SUN Yuejjun

Beryllium-Implanted Gallium Nitride: Electrical and Structural Analysis

SUN Yuejun

Electrical Properties of ICP Plasma-Damaged n-GaN

SUNAKAWA Haruo

Crystallographic Structure of FIELO-GaN Films Studied by Scanning Reflection Electron Microscopy

SUZUKI A.

Annealing Effect of Low Temperature Growth of InN Films by RF-MBE

SUZUKI Akira

Structural Analysis of AlN films grown on SiC substrate by RF-MBE and RF-MEE

SUZUKI Jun

GaN Epitaxial Growth Using RF Pulsed Laser Deposition (PLD) Method with Molten Ga Target

SUZUKI Kazuhiko

Influence of Inhomogeneous Barrier on I-V Characteristics of Metal/GaN Schottky Diodes

SUZUKI Koji

MBE growth of InN on Si toward Hole-Barrier Structure in Si Devices

SUZUKI Kousuke

Coaxial Impact Collision Ion Scattering Spectroscopy (CAICISS) Analysis for the Polarity Conversion of GaN Films Grown on Nitrided Sapphire Substrates

SUZUKI Nobuo.

Effect of Intermediated Layers in Al0.65Ga0.35N/GaN Multiple Quantum Wells

SUZUKI Seiji

UV Solar Cells Based on Mg-Doped Hydrogenated GaN on Glass Substrates grown at 380ì·C

SUZUKI Toshimasa

Observation of the Early Stages and 3D-2D Transition of MOCVD Grown GaN with LT-GaN Buffer Layer

SZE Simon M.

The Optical and Electrical Characteristics of CO2 Laser Treated Mg-Doped GaN Film

TABATA Am�Lerico Sheitiro

Overdamped Electron Plasma Oscillations in Cubic AlxGa1-xN Layers Observed by Raman Scattering Spectroscopy

TACHIBANA Akimoto

Regional Density Functional Theory for Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth

TACHIBANA Koichi

Growth and Physics of Nitride-Based Quantum Dots for Optelectronics Applications

High-Density InGaN Quantum Dots Fabricated by Selective MOCVD Growth

TACKEUCHI Atsushi

Free Carrier Screening of Quantum-Confined Stark Effect Affecting on Luminescence Energy Shift and Carrier Lifetime in InGaN Quantum Wells

TAGA Yasunori

UV Photoemission and Field Emission Study of AlGaN/GaN Emitters

TAGUCHI Tsunemasa

Growth and Characterization of GaN Epilayer on Sapphire Substrate by Ammonia Gas Source Molecular Beam Epitaxy

Temperature Dependent Carrier Dynamics in GaInN/GaN Multiple Quantum Wells with Varying In Composition

Role of Nanostructures in the Radiative Recombination Process of InGaN-Based Light-Emitting-Diodes

TAKAGISHI Shigenori

Raman Scattering Characterization of Annealed GaNxAs1-x Layers

TAKAHASHI Kazuya

The Effects of Atomic Hydrogen on the III-Nitride Growth Dynamics in RF-Molecular Beam Epitaxy

TAKAHASHI Kiyoshi

A New Approach to Grow GaN by Low-Pressure MOCVD Using a Three Steps Tecnique

Direct Observation of Defect Structures in Ga-Polar and N-Polar GaN Epilayers by Cross-Sectional Cathodoliminescence

TAKAHASHI Kiyosi

Coaxial Impact Collision Ion Scattering Spectroscopy (CAICISS) Analysis for the Polarity Conversion of GaN Films Grown on Nitrided Sapphire Substrates

TAKAHASHI Mitsuo

Raman Scattering Characterization of Annealed GaNxAs1-x Layers

TAKAHASHI Osamu

HVPE/MOMBE Hybrid Growth of High Quality Hexagonal GaN on SiO2 Substrates with an AlN Buffer Layer

TAKAHASHI Yuji

Theoretical Comparison of AlxGa1-xN/GaN (x=0.2 and 0.4) HJFETs Based on Full Band Monte Carlo Simulation

TAKAI Osamu

Photoassisted Anodic Etching of n-InN Films in an AGW Electrolyte

TAKAMATSU Yukichi

Gas-Source MBE Growth of GaN Films Using Tertiarybutylhydrazine as a Nitrogen Precursor

TAKANO T.

Improved 250nm UV PL Spectra from BAlGaN/AlN MQW on 6H-SiC Substrate by MOVPE using TEB

TAKATANI Kunihiro

Analysis of Lateral Transverse Modes of Ridge-Geometry AlGaInN Laser Diodes

TAKEMOTO Kikurou

Thermodynamic Analysis and In Situ Gravimetric Monitoring of GaN Decomposition

Influence of Growth Temperature on the Crystalline Quality of Hexagonal GaN Layer on GaAs (111)A by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy

TAKEUCHI T.

Resonant Cavity Blue and Near Ultraviolet Light Emitting Devices

TAKEUCHI Tetsuya

Polarization Control in Nitride-Based Semiconductor

Temperature Dependent Carrier Dynamics in GaInN/GaN Multiple Quantum Wells with Varying In Composition

TAKEYA Motonobu

Novel Methods of p-type Activation in GaN:Mg

GaN-Based High Power Blue-Violet Laser Diodes

TAMPO Hitoshi

Gas Source Molecular Beam Epitaxy Growth of Polycrystalline GaN on Metal Substrate and the Observation of Strong Photoluminescence Emision

Electrical and Optical Properties of Si- and Mg-Doped Polycrystalline GaN on Quartz Glass Substrate

TAMULAITIS Gintautas

Optical Properties of AlInGaN Alloys and AlInGaN/InGaN Multiple Quantum Wells

TAMWEBER F. D.

Synthesis and Properties of HVPE Nitride Substrates

TAN Leng Seow

Beryllium-Implanted Gallium Nitride: Electrical and Structural Analysis

TANABE Tatsuya

Raman Scattering Characterization of Annealed GaNxAs1-x Layers

TANAKA Mitsuhiro

Surface Acoustic Wave Filters at 2.4GHz Using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD

TANAKA Satoru

Reflection Spectra of Al1-xGaxN

TANAKA Shigeyasu

Transmission Electron Microscopy Study of Selective Area Growth of GaN on (111)Si using AlGaN as an Intermediate Layer

TANAKA So

Raman Scattering Characterization of Annealed GaNxAs1-x Layers

TANEYA Mototaka

Local Vibrational Modes in Mg-doped GaN as a Probe of Activation and Deactivation of Acceptors

Analysis of Lateral Transverse Modes of Ridge-Geometry AlGaInN Laser Diodes

TANG H.

Advances in III-Nitride Growth by Ammonia-MBE

TANIYASU Yoshitaka

Direct Observation of Defect Structures in Ga-Polar and N-Polar GaN Epilayers by Cross-Sectional Cathodoliminescence

TANIYASU Yoshitake

Coaxial Impact Collision Ion Scattering Spectroscopy (CAICISS) Analysis for the Polarity Conversion of GaN Films Grown on Nitrided Sapphire Substrates

TARAKJI Ahmad

Large Periphery AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

TEEPE M.

Fabrication of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates by Laser Lift-Off

TEEPE Mark

Advances in Blue Laser Diode Development for High Resolution Printing

TELES Lara Kuhl

Influence of Biaxial Strain on Thermodynamic, Structural and Electronic Properties of InxGa1-xN Alloys

TEOFILOV Nikolai

Resolved Band-Edge Luminescence of AlN on Different Substrates

TERAGUCHI N.

Annealing Effect of Low Temperature Growth of InN Films by RF-MBE

TERAGUCHI Nobuaki

Structural Analysis of AlN films grown on SiC substrate by RF-MBE and RF-MEE

TERAO Shinji

Effect of Impurity Doping on the Mechanical Properties ofˆBAlxGa1-xN Ternary Alloys

High-Efficiency GaN/AlxGa1-xN Multi-Quantum Well Light Emitter Grown on Low-Dislocation Density AlxGa1-xN

TERAZIMA Masahide

Nonradiative Recombination Processes in GaN-Based Semiconductors Probed by the Transient Grating Method

TEZEN Yuta

RT-CW Operation of GaN-Based Laser Diodes Improved by GaN/GaInN Optical Guiding Layers

THAMM Andreas

Influence of Internal Electric Fields on the Carrier Dynamics in GaN/(Al,Ga)N Multiple Quantum Wells with Different Orientation and Strain State

THOMPSON Carol

Measurement and Minimization of Wing Tilt in Laterally Overgrown GaN on a SiO2 Mask

THOMSEN C.

Spatially Resolved Spectroscopy at Micro-Cracks in AlGaN Layers

THOMSEN Christian

Cathodoluminescence Microscopy and Micro-Raman Spectroscopy of Growth Domains Formed During Epitaxial Lateral Overgrowth of GaN

THONKE Klaus

Resolved Band-Edge Luminescence of AlN on Different Substrates

High-Resolution Polariton Spectra of Homoepitaxial GaN: Temperature Dependence

TOJYO Tsuyoshi

GaN-Based High Power Blue-Violet Laser Diodes

TOKUNAGA Eiji

Non-Radiative Nature of Threading Dislocations in GaN Grown by Metal-Organic Chemical Vapor Deposition

TOMIYA S.

Crystallographic Tilt in Lateral Overgrowth of GaN Epitaxial Layers-Mask Material Dependence-

TOMIYA Shigetaka

Non-Radiative Nature of Threading Dislocations in GaN Grown by Metal-Organic Chemical Vapor Deposition

Structural and Optical Characteristics of GaInN Multiple Quantum Wells Grown by Raised-Pressure Metalorganic Chemical Vapor Deposition

GaN-Based High Power Blue-Violet Laser Diodes

TORII Kosuke

Photoreflectance Spectra of Excitonic Polaritons in Wurtzite GaN

TOROPOV A. A.

Polarized Photoluminescence Spectroscopy of HVPE GaN with Different Dislocation Structures

TOYOURA Yosuke

GaN-Based Resonant Cavity-Enhanced UV-Photodetectors

TRAETTA Giampiero

Mesoscopic Capacitor Effect in GaN/AlGaN Quantum Wells

TREAT David W.

Advances in Blue Laser Diode Development for High Resolution Printing

TREAT D. W.

Fabrication of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates by Laser Lift-Off

TSAI C. C.

Long-Term Photocapacitance Decay Behavior in Undoped GaN

TSAI Tzong-Liang

Acceptor Activation of Mg-Doped GaN by Microwave Treatment

TSAI Wen-Chung

The Optical and Electrical Characteristics of CO2 Laser Treated Mg-Doped GaN Film

TSANG Jian-Shihn

The Optical and Electrical Characteristics of CO2 Laser Treated Mg-Doped GaN Film

TSATSUL'NIKOV Andrew F.

Influence of Growth Interruptions and Gas Ambient on Optical and Structural Properties of InGaN/GaN Multilayer Structures

Influence of the Thick GaN Buffer Growth Conditions on the Electroluminescence Properties of GaN/InGaN Multilayer Heterostructures

TSUBAKI Kotaro

Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors at High Electron Densities

TSUCHIYA Hironori

Influences of Inert Nitrogen Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions on Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(111) Substrates by Moleclular-Beam Epitaxy Assisted by Electron Cyclotron Resonance

TSUCHIYA Tadayoshi

MOVPE Growth of 4-inch GaN Epitaxial Wafers for FETs on a-face and c-face Sapphire Substrates

TSUDA Yuhzoh

Analysis of Lateral Transverse Modes of Ridge-Geometry AlGaInN Laser Diodes

TSUJIMURA Ayumu

Complex Flow and Gas Phase Chemical Reactions in GaN MOVPE Reactor

Recombination Dynamics in GaN and InGaN/GaN Multiple Quantum Wells on Air-Bridged Lateral Epitaxial Grown GaN Layers

339nm Deep-UV Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate

TUNGASMITA Sukkaneste

HVPE Regrowth on Free-Standing GaN Quasi-Substrates

TWIST Rose

Polarization Control in Nitride-Based Semiconductor