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RAJAGOPAL Pradeep

Pendeo-Epitaxial Growth and Characterization of Gallium Nitride and Related Materials

RAMANA MURTY M. V.

Measurement and Minimization of Wing Tilt in Laterally Overgrown GaN on a SiO2 Mask

RATNIKOV Valentin A.

Growth of Self-Organized GaN Nanostructures on Al2O3 (0001) by RF MBE

RATNIKOV V. V.

Polarized Photoluminescence Spectroscopy of HVPE GaN with Different Dislocation Structures

RAUSCHENBACH Bernd

Influence of the Ion Irradiation During Low-Energy Nitrogen Ion Assisted Deposition of Wurtzitic Gallium Nitride Films on Sapphire

Electrical Chracterization of Ion Implantation Induced Defect States in Gallium Nitride

REEVES Roger J.

Photoluminescence and Photoconductivity Studies of Reactive-Ion-Etched GaN on SiC Substrates

RESHCHIKOV Michael A.

Blue Photoluminescence Activated by Surface States in GaN

RICHTER Stefan

InGaN/GaN Blue Light Emitter Grown on Si(111) Using an AlAs Seed Layer

RIEMANN T.

Spatially Resolved Spectroscopy at Micro-Cracks in AlGaN Layers

RIEMANN Till

Time-Modulated Growth of Thick GaN by Hydride Vapor Phase Epitaxy : Suppression of Dislocations

Cathodoluminescence Microscopy and Micro-Raman Spectroscopy of Growth Domains Formed During Epitaxial Lateral Overgrowth of GaN

RINGEL Steven A.

Detection and Identification of Deep Levels in n-GaN

RIZZI Angela

Optical Emission from Surface and Buried AlGaN/GaN MQWs Grown by MBE on 6H-SiC

RODRIGUES Sara Cristina Pinto

Cubic AlGaN/GaN and GaN/InGaN Heterostructures:Effects of p-type Doping

ROESEL Stephan

Time-Modulated Growth of Thick GaN by Hydride Vapor Phase Epitaxy : Suppression of Dislocations

ROMANO Linda T.

Advances in Blue Laser Diode Development for High Resolution Printing

RONG Bifeng

Photoluminescence and Photoconductivity Studies of Reactive-Ion-Etched GaN on SiC Substrates

ROSAMOND Matt

Growth and Characterization of GaN Epilayer on Sapphire Substrate by Ammonia Gas Source Molecular Beam Epitaxy

ROUVI�MERE J. L.

Strain Relaxation Mechanisms in Hexagonal and Cubic Nitride Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

RUDLOFF D.

Spatially Resolved Spectroscopy at Micro-Cracks in AlGaN Layers

RUE R. M. De La

ICP Etching for the Fabrication of AlGaInN VCSELs with Dielectric Mirrors

RUF T.

Magneto-Spectroscopy of Donor-Bound Excitons in Homoepitaxial GaN

RUMYANTSEV Sergey L.

Effect of Gate Leakage Current on Noise in AlGaN/GaN HFETs

RYU Mee-Yi

Evidence of Localized States in InGaN/GaN Double Heterostructures