Most Cited Articles 2012

The 10 articles published in JJAP from 2009 to 2011 that were most frequently cited in 2012, in order of publication date.
PDF files of the full text of these articles are available free of charge for one year.
Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors
Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi, Hirotaka Yamaguchi, and Setsuo Kaneko
Jpn. J. Appl. Phys. 48 (2009) 010203
[Abstract] [Full Text PDF Free ]
Partial Response Maximum Likelihood Detections Using Two-Dimensional Soft Output Viterbi Algorithm with Two-Dimensional Equalizer for Holographic Data Storage
Jinyoung Kim and Jaejin Lee
Jpn. J. Appl. Phys. 48 (2009) 03A033
[Abstract] [Full Text PDF Free ]
Radiation Chemistry in Chemically Amplified Resists
Takahiro Kozawa and Seiichi Tagawa
Jpn. J. Appl. Phys. 49 (2010) 030001
[Abstract] [Full Text PDF Free ]
Effects of Hafnium Substitution on Dielectric and Electromechanical Properties of Lead-free Bi0.5(Na0.78K0.22)0.5(Ti1-xHfx)O3 Ceramics
Ali Hussain, Chang Won Ahn, Aman Ullah, Jae Shin Lee, and Ill Won Kim
Jpn. J. Appl. Phys. 49 (2010) 041504
[Abstract] [Full Text PDF Free ]
Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography
Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, and Seiichi Tagawa
Jpn. J. Appl. Phys. 49 (2010) 066504
[Abstract] [Full Text PDF Free ]
Error Correcting 4/6 Modulation Codes for Holographic Data Storage
Jinyoung Kim, Jae-Kyung Wee, and Jaejin Lee
Jpn. J. Appl. Phys. 49 (2010) 08KB04
[Abstract] [Full Text PDF Free ]
Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography
Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, and Seiichi Tagawa
Jpn. J. Appl. Phys. 49 (2010) 116505
[Abstract] [Full Text PDF Free ]
Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers
Yosuke Nakakita, Ryosho Nakakne, Takashi Sasada, Mitsuru Takenaka, and Shinichi Takagi
Jpn. J. Appl. Phys. 50 (2011) 010109
[Abstract] [Full Text PDF Free ]
Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
Chihoko Mizue, Yujin Hori, Marcin Miczek, and Tamotsu Hashizume
Jpn. J. Appl. Phys. 50 (2011) 021001
[Abstract] [Full Text PDF Free ]
Present Status and Future Prospects of Silicon Thin-Film Solar Cells
Makoto Konagai
Jpn. J. Appl. Phys. 50 (2011) 030001
[Abstract] [Full Text PDF Free ]
First Principles Calculations of Defect Formation in In-Free Photovoltaic Semiconductors Cu2ZnSnS4 and Cu2ZnSnSe4
Tsuyoshi Maeda, Satoshi Nakamura, and Takahiro Wada
Jpn. J. Appl. Phys. 50 (2011) 04DP07
[Abstract] [Full Text PDF Free ]
Optical Absorption Properties of BaSi2 Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy
Katsuaki Toh, Takanobu Saito, and Takashi Suemasu
Jpn. J. Appl. Phys. 50 (2011) 068001
[Abstract] [Full Text PDF Free ]
Nature of Graphene Edges: A Review
Muge Acik and Yves J. Chabal
Jpn. J. Appl. Phys. 50 (2011) 070101
[Abstract] [Full Text PDF Free ]
Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces
Seoung-Hwan Park, Doyeol Ahn, Jongwoon Park, and Yong-Tak Lee
Jpn. J. Appl. Phys. 50 (2011) 072101
[Abstract] [Full Text PDF Free ]
Assessment and Extendibility of Chemically Amplified Resists for Extreme Ultraviolet Lithography: Consideration of Nanolithography beyond 22nm Half-Pitch
Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, and Seiichi Tagawa
Jpn. J. Appl. Phys. 50 (2011) 076503
[Abstract] [Full Text PDF Free ]