JSAP OUTSTANDING PAPER AWARD — 2011

JSAP PAPER AWARD

• [FREE ACCESS] Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films
  Masahiro Mitani, Takahiko Endo, Shinzo Tsuboi, Takashi Okada, Genshiro Kawachi, and Masakiyo Matsumura
  Jpn. J. Appl. Phys. 49 (2010) 124001
• [FREE ACCESS] Microplasma-Induced Deformation of an Anomalous Response Spectrum of Electromagnetic Waves Propagating along Periodically Perforated Metal Plates
  Dae-Sung Lee, Osamu Sakai, and Kunihide Tachibana
  Jpn. J. Appl. Phys. 48 (2009) 062004
• [FREE ACCESS] Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
  Daiyu Kondo, Shintaro Sato, Katsunori Yagi, Naoki Harada, Motonobu Sato, Mizuhisa Nihei, and Naoki Yokoyama
  Appl. Phys. Express 3 (2010) 025102
• [FREE ACCESS] Direct Imaging of Hydrogen within a Crystalline Environment
  Scott D. Findlay, Tomohiro Saito, Naoya Shibata, Yukio Sato, Junko Matsuda, Kohta Asano, Etsuo Akiba, Tsukasa Hirayama, and Yuichi Ikuhara
  Appl. Phys. Express 3 (2010) 116603
• [FREE ACCESS] Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
  Kosuke Nagashio, Tomonori Nishimura, Koji Kita, and Akira Toriumi
  Jpn. J. Appl. Phys. 49 (2010) 051304
• [FREE ACCESS] Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates
  Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono
  Jpn. J. Appl. Phys. 49 (2010) 056203

JSAP YOUNG SCIENTIST AWARD

• [FREE ACCESS] Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO₂ Gate Stack Fabricated by Gate-Last Process
  Takashi Ando, Tomoyuki Hirano, Kaori Tai, Shinpei Yamaguchi, Shinichi Yoshida, Hayato Iwamoto, Shingo Kadomura, and Heiji Watanabe
  Jpn. J. Appl. Phys. 49 (2010) 016502
• [FREE ACCESS] Single-Crystalline Ferromagnetic Alloy Semiconductor Ge_1-xMn_x Grown on Ge(111)
  Shinsuke Yada, Ryohei Okazaki, Shinobu Ohya, and Masaaki Tanaka
  Appl. Phys. Express 3 (2010) 123002
• [FREE ACCESS] Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K
  Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, and Shunri Oda
  Appl. Phys. Express 2 (2009) 095002
• [FREE ACCESS] Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
  Toru Hiyoshi and Tsunenobu Kimoto
  Appl. Phys. Express 2 (2009) 091101
• [FREE ACCESS] High Photoluminescent Property of Low-Melting Sn-Doped Phosphate Glass
  Hirokazu Masai, Yoshihiro Takahashi, Takumi Fujiwara, Syuji Matsumoto, and Toshinobu Yoko
  Appl. Phys. Express 3 (2010) 082102
• [FREE ACCESS] Generation of Non-Classical Microwave Photon States in an Inductor–Capacitor Resonator Coupled to a Superconducting Flux Qubit
  Kosuke Kakuyanagi, Seiichiro Kagei, Shiro Saito, Hayato Nakano, and Kouichi Semba
  Appl. Phys. Express 3 (2010) 103101
• [FREE ACCESS] High Critical Current Density 4 MA/cm² in Co-Doped BaFe₂As₂ Epitaxial Films Grown on (La,Sr)(Al,Ta)O₃ Substrates without Buffer Layers
  Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, and Hideo Hosono
  Appl. Phys. Express 3 (2010) 063101
• [FREE ACCESS] Self Contact Organic Transistors
  Jun-ichi Inoue, Hiroshi Wada, and Takehiko Mori
  Jpn. J. Appl. Phys. 49 (2010) 071605