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JSAP PAPER AWARD
- High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C
Dharam Pal Gosain, Takashi Noguchi, and Setsuo Usui
Jpn. J. Appl. Phys. 39 (2000) L179
- A Novel Diffusion Resistant P-Base Region Implantation for Accumulation Mode 4H–SiC Epi-Channel Field Effect Transistor
Rajesh Kumar, Jun Kozima, and Tsuyoshi Yamamoto
Jpn. J. Appl. Phys. 39 (2000) 2001
- High-Rate Deposition of High-Quality, Thick Cubic Boron Nitride Films by Bias-Assisted DC Jet Plasma Chemical Vapor Deposition
Seiichiro Matsumoto and Wenjun Zhang
Jpn. J. Appl. Phys. 39 (2000) L442
- Simultaneous Observation of Millisecond Dynamics in Atomistic Structure, Force and Conductance on the Basis of Transmission Electron Microscopy
Tokushi Kizuka, Hajime Ohmi, Takao Sumi, Katsuyoshi Kumazawa, Shunji Deguchi, Mikio Naruse, Satoru Fujisawa, Shinya Sasaki, Akira Yabe, and Yuji Enomoto
Jpn. J. Appl. Phys. 40 (2001) L170
- Rewritable Dual-Layer Phase-Change Optical Disk Utilizing a Blue-Violet Laser
Tetsuya Akiyama, Mayumi Uno, Hideki Kitaura, Kenji Narumi, Rie Kojima, Kenichi Nishiuchi, and Noboru Yamada
Jpn. J. Appl. Phys. 40 (2001) 1598
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