JSAP OUTSTANDING PAPER AWARD — 2005

JSAP PAPER AWARD

• Electrostatically Levitated Ring-Shaped Rotational-Gyro/Accelerometer
  Takao Murakoshi, Yasuo Endo, Keisuke Fukatsu, Sigeru Nakamura, and Masayoshi Esashi
  Jpn. J. Appl. Phys. 42 (2003) 2468
• Novel Cladding Structure for ZnSe-based White Light Emitting Diodes with Longer Lifetimes of over 10,000 h
  Takao Nakamura, Shinsuke Fujiwara, Hiroki Mori and Koji Katayama
  Jpn. J. Appl. Phys. 43 (2004) 1287
• High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling
  Shinji Yuasa, Akio Fukushima, Taro Nagahama, Koji Ando, and Yoshishige Suzuki
  Jpn. J. Appl. Phys. 43 (2004) L588
• Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm
  Wenhong Sun, Vinod Adivarahan, Maxim Shatalov, Youngbae Lee, Shuai Wu, Jinwei Yang, Jianping Zhang, and M. Asif Khan
  Jpn. J. Appl. Phys. 43 (2004) L1419
• Construction of X-ray Dark-Field Imaging with a View Size of 80 mm Square and First Visualization of Human Articular Cartilage of Femoral Head under a Nearly Clinical Condition
  Masami Ando, Hiroshi Sugiyama, Toshiyuki Kunisada, Daisuke Shimao, Ken Takeda, Hiroyuki Hashizume, and Hajime Inoue
  Jpn. J. Appl. Phys. 43 (2004) L1175

JSAP YOUNG SCIENTIST AWARD

• First Demonstration of TE Mode Nonreciprocal Propagation in an InGaAsP/InP Active Waveguide for an Integratable Optical Isolator
  Hiromasa Shimizu and Yoshiaki Nakano
  Jpn. J. Appl. Phys. 43 (2004) L1561
• Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
  Yuichi Oshima, Takeshi Eri, Masatomo Shibata, Haruo Sunakawa, Kenji Kobayashi, Toshinari Ichihashi, and Akira Usui
  Jpn. J. Appl. Phys. 42 (2003) L1
• Room-Temperature Observation of Negative Differential Conductance Due to Large Quantum Level Spacing in Silicon Single-Electron Transistor
  Masumi Saitoh and Toshiro Hiramoto
  Jpn. J. Appl. Phys. 43 (2004) L210
• InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
  Masataka Higashiwaki and Toshiaki Matsui
  Jpn. J. Appl. Phys. 43 (2004) L768