JSAP OUTSTANDING PAPER AWARD — 2002

JSAP PAPER AWARD

• High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C
  Dharam Pal Gosain, Takashi Noguchi, and Setsuo Usui
  Jpn. J. Appl. Phys. 39 (2000) L179
• A Novel Diffusion Resistant P-Base Region Implantation for Accumulation Mode 4H–SiC Epi-Channel Field Effect Transistor
  Rajesh Kumar, Jun Kozima, and Tsuyoshi Yamamoto
  Jpn. J. Appl. Phys. 39 (2000) 2001
• High-Rate Deposition of High-Quality, Thick Cubic Boron Nitride Films by Bias-Assisted DC Jet Plasma Chemical Vapor Deposition
  Seiichiro Matsumoto and Wenjun Zhang
  Jpn. J. Appl. Phys. 39 (2000) L442
• Simultaneous Observation of Millisecond Dynamics in Atomistic Structure, Force and Conductance on the Basis of Transmission Electron Microscopy
  Tokushi Kizuka, Hajime Ohmi, Takao Sumi, Katsuyoshi Kumazawa, Shunji Deguchi, Mikio Naruse, Satoru Fujisawa, Shinya Sasaki, Akira Yabe, and Yuji Enomoto
  Jpn. J. Appl. Phys. 40 (2001) L170
• Rewritable Dual-Layer Phase-Change Optical Disk Utilizing a Blue-Violet Laser
  Tetsuya Akiyama, Mayumi Uno, Hideki Kitaura, Kenji Narumi, Rie Kojima, Kenichi Nishiuchi, and Noboru Yamada
  Jpn. J. Appl. Phys. 40 (2001) 1598

JSAP YOUNG SCIENTIST AWARD

• Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N₂O and NO Oxynitrides
  Takamitsu Ishihara, Shin-ichi Takagi, and Masaki Kondo
  Jpn. J. Appl. Phys. 40 (2001) 2597
• Ultraviolet GaN Single Quantum Well Laser Diodes
  Shin-ichi Nagahama, Tomoya Yanamoto, Masahiko Sano and Takashi Mukai
  Jpn. J. Appl. Phys. 40 (2001) L785
• Photopumped Organic Solid-State Dye Laser with a Second-Order Distributed Feedback Cavity
  Musubu Ichikawa, Yuji Tanaka, Naotoshi Suganuma, Toshiki Koyama, and Yoshio Taniguchi
  Jpn. J. Appl. Phys. 40 (2001) L799
• Single-Electron Signal Modulator Designed for a Flash Analog-to-Digital Converter
  Yoshinao Mizugaki and Per Delsing
  Jpn. J. Appl. Phys. 40 (2001) 6157
• Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation
  Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, and Kunikazu Izumi
  Jpn. J. Appl. Phys. 40 (2001) L1012